Optimization of epitaxial quality in sputtered films of ferroelectric bismuth titanate

Takei, W. J.; Wu, S.Y.; Francombe, M. H.

doi:10.1016/0022-0248(75)90234-1

Cited by 12 publications

(4 citation statements)

References 13 publications

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“…Whatever the application, the ability to control the orientation of the epitaxial film through the choice of substrate, its orientation (see, e.g., Fig. 6), and the growth conditions is a key advantage of epitaxial growth 172,247–253 . Orientation control is vital to the preparation of samples suitable for establishing the intrinsic properties of materials, especially those that cannot be prepared as bulk single crystals due to their metastability, high melting temperatures, or phase transitions that occur on cooling.…”

Section: Orientation Controlmentioning

confidence: 99%

“…For functional oxides with perovskite structures (e.g., SrTiO 3 , BiMnO 3 , BiFeO 3 , Pb(Zr,Ti)O 3 , and PbZn 1/3 Nb 2/3 O 3 –PbTiO 3 ), chemically and structurally compatible perovskite substrate materials are needed. Intensive work on high‐temperature superconductors stimulated the production of many perovskite single crystals 230–269 to diameters up to 4 in. as well as spawning a number of new perovskite and perovskite‐related substrates 270–273 .…”

Section: Integration Of Oxidesmentioning

confidence: 99%

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A Thin Film Approach to Engineering Functionality into Oxides

Schlom

Chen

Pan

et al. 2008

Journal of the American Ceramic Society

486

358

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The broad spectrum of electronic and optical properties exhibited by oxides offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Here we describe the use of reactive molecular‐beam epitaxy and pulsed‐laser deposition to synthesize functional oxides, including ferroelectrics, ferromagnets, and materials that are both at the same time. Owing to the dependence of properties on direction, it is often optimal to grow functional oxides in particular directions to maximize their properties for a specific application. But these thin film techniques offer more than orientation control; customization of the film structure down to the atomic‐layer level is possible. Numerous examples of the controlled epitaxial growth of oxides with perovskite and perovskite‐related structures, including superlattices and metastable phases, are shown. In addition to integrating functional oxides with conventional semiconductors, standard semiconductor practices involving epitaxial strain, confined thickness, and modulation doping can also be applied to oxide thin films. Results of fundamental scientific importance as well as results revealing the tremendous potential of utilizing functional oxide thin films to create devices with enhanced performance are described.

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Section: Orientation Controlmentioning

confidence: 99%

Section: Integration Of Oxidesmentioning

confidence: 99%

A Thin Film Approach to Engineering Functionality into Oxides

Schlom

Chen

Pan

et al. 2008

Journal of the American Ceramic Society

486

358

View full text Add to dashboard Cite

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“…The MgA1204 spinel-forming reaction is also of technological significance as it plays a certain role in the preparation of alumina particulate-reinforced metal matrix composites [27,281. Moreover, MgA1204 films are used as substrates or buffer layers for technologically relevant thin films as, e. g., ferroelectric Bi4Ti30t2 [29] or superconducting Y B~, C U~O , -~ [30], or as humidity sensors [31].…”

Section: Introductionmentioning

confidence: 99%

TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl₂O₄ formation on MgO (001) and Al₂O₃ (1 1.2) single crystal substrates

Sieber

Hesse

Senz

et al. 1996

Zeitschrift anorg allge chemie

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The formation of well-oriented MgA1204 spinel films by solid state reactions between (i) a MgO (001) substrate and an A1203 vapour and (ii)a sapphire (17.2) substrate and a deposited solid MgO film, respectively, is experimentally investigated. Composition, structure and morphology of the films are characterized by XRD, SEM, TEMBAED, and EDX. The reaction fronts involved are investigated by cross-sectional atomic resolution transmission electron microscopy (ARM). The direction of the overall diffusion flux and the kind of diffusing species are determined in experiments using inert markers of sub-micron size. There are common features and, however, distinct differences between cases (i) and (ii). On MgO(001) substrates, the MgA1,04 films grow in a simple cube-to-cube orientation: MgA1204(001) I 1 MgO(001); MgA1204[100] II Mg0[100]. The films consist of small grains about 25 to 50 nm in diameter, the orientation of which is sym-metrically distributed around the exact orientation, with maximum deviations of about +2". On sapphire (1 7.2) substrates the MgA1204 films grow almost in the orientation MgAl2O4(001) I/ A120,(l i.2); MgA1204[010] II A1203[11.0]. These films consist of larger grains about 100 nm in diameter, the orientation of which systematically deviates from the above orientation by unidirectional rotations up to 5 to 6" around the substrate [I 1.01 axis. The structures of the reaction fronts show corresponding differences, which are discussed in terms of different mechanisms occurring at the initial stage of the spinelforming reaction because of the different crystallographic conditions at the beginning of the reactions.

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“…This is especially true when growth on a bottom electrode is required for ferroelectric capacitor-type applications. The pioneering work of Wu and colleagues (10,11) demonstrated the epitaxial growth of high-quality a axis-and b axis-oriented Bi 4 Ti 3 O 12 films on (110) MgO and (110) MgAl 2 O 4 substrates, but not on silicon. Because the films were grown without bottom electrodes, they had to be peeled off from the insulating substrates to make electrical measurements (10).…”

mentioning

confidence: 99%

Orienting Ferroelectric Films

Ramesh

Schlom

2002

Science

136

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Optimization of epitaxial quality in sputtered films of ferroelectric bismuth titanate

Cited by 12 publications

References 13 publications

A Thin Film Approach to Engineering Functionality into Oxides

A Thin Film Approach to Engineering Functionality into Oxides

TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl₂O₄ formation on MgO (001) and Al₂O₃ (1 1.2) single crystal substrates

Orienting Ferroelectric Films

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Optimization of epitaxial quality in sputtered films of ferroelectric bismuth titanate

Cited by 12 publications

References 13 publications

A Thin Film Approach to Engineering Functionality into Oxides

A Thin Film Approach to Engineering Functionality into Oxides

TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl2O4 formation on MgO (001) and Al2O3 (1 1.2) single crystal substrates

Orienting Ferroelectric Films

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TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl₂O₄ formation on MgO (001) and Al₂O₃ (1 1.2) single crystal substrates