2022
DOI: 10.1142/s2010135x22420036
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Optimization of energy storage properties in (1 − x)Na0.5Bi0.5TiO3-xSr0.7La0.2TiO3-relaxed ferroelectric ceramics

Abstract: Ferroelectric materials are considered to be the most competitive energy storage materials for applications in pulsed power electronics due to excellent charge–discharge properties. However, the low energy storage density is the primary problem limiting their practical application. In this study, (1[Formula: see text])Na[Formula: see text]Bi[Formula: see text]TiO3–[Formula: see text]Sr[Formula: see text]La[Formula: see text]TiO3[(1[Formula: see text])NBT–[Formula: see text]SLT] ferroelectric ceramics are found… Show more

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Cited by 5 publications
(4 citation statements)
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“…27,28 Figure 4B depicts the magnified (200) peak range, highlighting a significant shift toward the lower angles with the increasing x, which was due to the lattice expansion caused by the substitution of ions with large ionic radii (R Sr 2+ = 1.44 Å, R Mg 2+ = 0.72 Å) for the host ions with small ionic radii (R Na + = 1.39 Å, R Nb 5+ = 0.64 Å). 29 Furthermore, the splitting of low-angle diffraction peaks is not influenced by K β diffraction lays, indicating that the (1 -x)NN-xSBMN ceramics possess a tetragonal structure. 30 To obtain the detailed phase structure of (1 -x)NN-xSBMN ceramics, Rietveld refinement was carried out based on XRD data.…”
Section: Resultsmentioning
confidence: 94%
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“…27,28 Figure 4B depicts the magnified (200) peak range, highlighting a significant shift toward the lower angles with the increasing x, which was due to the lattice expansion caused by the substitution of ions with large ionic radii (R Sr 2+ = 1.44 Å, R Mg 2+ = 0.72 Å) for the host ions with small ionic radii (R Na + = 1.39 Å, R Nb 5+ = 0.64 Å). 29 Furthermore, the splitting of low-angle diffraction peaks is not influenced by K β diffraction lays, indicating that the (1 -x)NN-xSBMN ceramics possess a tetragonal structure. 30 To obtain the detailed phase structure of (1 -x)NN-xSBMN ceramics, Rietveld refinement was carried out based on XRD data.…”
Section: Resultsmentioning
confidence: 94%
“…The crystal structure and macroscopic properties of materials are closely related, whether piezoelectric properties or energy storage properties 27,28 . Figure 4B depicts the magnified (200) peak range, highlighting a significant shift toward the lower angles with the increasing x , which was due to the lattice expansion caused by the substitution of ions with large ionic radii (R Sr 2+ = 1.44 Å, R Mg 2+ = 0.72 Å) for the host ions with small ionic radii (R Na + = 1.39 Å, R Nb 5+ = 0.64 Å) 29 . Furthermore, the splitting of low‐angle diffraction peaks is not influenced by K β diffraction lays, indicating that the (1 – x )NN– x SBMN ceramics possess a tetragonal structure 30 .…”
Section: Resultsmentioning
confidence: 99%
“…A series of Sr(Sc 0.5 Nb 0.5 )O 3 (SSN) were subsequently doped into the binary matrix BNT-NN to modulate the phase structure and disrupt the structure of the long-range ordered ferroelectric domains. Subject to ionic radius and valence limitations, Sr 2+ (1.44 Å, CN = 12) preferentially replaces Bi 3+ (1.36 Å, CN = 12) and Na + (1.39 Å, CN = 12) at the A site, and Sc 3+ (0.745 Å, CN = 6) and Nb 5+ (0.64 Å, CN = 6) preferentially replace Ti 4+ (0.604 Å, CN = 6) at the B site. To verify the stability of the perovskite structure, we calculated the perovskite tolerance factor t according to the formula t = r A + r O 2 false( r B + r O false) , where r A , r B , and r O denote the radii of the A-site, B-site, and O ionic of the ABO 3 structure, respectively. , As the Sr(Sc 0.5 Nb 0.5 )O 3 doping content increases from 0 to 0.25, t decreases from 0.9968 to 0.9946. The perovskite tolerance factor t values range from 0.81 to 1.11, indicating that we can obtain a stable perovskite structure .…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, energy storage ceramics have emerged as crucial capacitors in pulsed power systems, exhibiting significant potential for application in diverse fields including electromagnetic catapults, directed-energy weapons, high-power microwave communications, and pulsed electronic circuits. 7–10 Current limitations in energy storage density and efficiency hinder the development of high-integrated, high-performance devices required by the contemporary electronics industry. 11–13 The urgent challenge in obtaining dielectric materials with high energy storage density is to further enhance the material breakdown field strength while ensuring the dielectric constant.…”
Section: Introductionmentioning
confidence: 99%