2022
DOI: 10.1016/j.mtcomm.2022.104181
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Optimization of electronic and optical properties of transition metal doped ZnO By DFT+U method and supported by experimental findings

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Cited by 2 publications
(3 citation statements)
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“…8 shows that including the Ni atom in the ZnO host structure practically did not modify the electronic bandgap, in very good agreement with the transmittance measurements in the ceramic samples (Table IV). On the other hand, from the comparison of the predictions to other recent investigations that involve the DFT+U approach in Ni-doped systems, it is concluded that details in the DOS description depend on the choice of the semiempirical U potentials and also on the Ni concentration [24,28,41]. In particular, providing an accurate enough prediction about how the impurity levels are placed within the bandgap is difficult.…”
Section: Theoretical Resultsmentioning
confidence: 88%
See 1 more Smart Citation
“…8 shows that including the Ni atom in the ZnO host structure practically did not modify the electronic bandgap, in very good agreement with the transmittance measurements in the ceramic samples (Table IV). On the other hand, from the comparison of the predictions to other recent investigations that involve the DFT+U approach in Ni-doped systems, it is concluded that details in the DOS description depend on the choice of the semiempirical U potentials and also on the Ni concentration [24,28,41]. In particular, providing an accurate enough prediction about how the impurity levels are placed within the bandgap is difficult.…”
Section: Theoretical Resultsmentioning
confidence: 88%
“…In this sense, considering that it is known that standard DFT underestimates the experimental ZnO bandgap and related properties, many approaches based on DFT have been proposed to improve their predictions [18][19][20][21]. Among them, the DFT+U approach has been demonstrated to be accurate enough for the calculation of structural, elastic, and electronic properties in pristine ZnO, making it suitable for more complex systems such as those with impurities and other defects [22][23][24].…”
Section: Introductionmentioning
confidence: 99%
“…However, they do not produce higher optical absorption in the visible region than in the UV region. In the first-principles calculation, various elements were also used to carry out substitutional doping on WZ-ZnO, [17,35,[38][39][40][41][42][43][44][45][46] but most of the studies only increased the visible light absorption to below 4 Â 10 4 cm À1 and almost no significant results were produced. Only Yin et al [41] reported that an absorption peak as high as 5 Â 10 4 cm À1 was obtained in the visible light region by doping Sn in WZ-ZnO to generate an intermediate band to reduce the bandgap, which is the best result obtained DOI: 10.1002/pssb.202300277 Zinc oxide (ZnO) is a promising semiconductor material in the field of photocatalysis due to its excellent electronic and optical properties.…”
Section: Introductionmentioning
confidence: 99%