Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Papadimitriou, D.; Roupakas, G.; Roumeliotis, Georgios G.; Vogt, Patrick; Köhler, Tristan

doi:10.3390/en9110951

Cited by 6 publications

(21 citation statements)

References 87 publications

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“…ZnSe deposited by CBD on Mo/glass can further be employed as test-structure for the electrochemical deposition (ECD) of ZnO. 122,123 The lattice mismatch between hexagonal ZnSe (a = b = 3.974 Å) and cubic Mo (a = 3.146 Å) is ∼20%; the ZnSe layer is thus compressively strained. The Raman spectrum of CBD ZnSe is dominated by the A 1 (LO) phonon mode at 253.2 cm −1 , which appears red-shifted with respect to the frequency of the bulk (254.5 cm −1 ) and exhibits asymmetric broadening indicative of the presence of crystallites with sizes in nanometer scale as discussed in section Strain/Stress analysis based on RAMAN spectroscopy.…”

Section: Resultsmentioning

confidence: 99%

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Vacuum and Liquid-Phase Processing of ZnSe Buffer-Layer for Chalcopyrite Absorber Based Photovoltaic Technology

Papadimitriou

2018

ECS J. Solid State Sci. Technol.

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ZnSe thin films were processed in-vacuum by EBD and in-solution by CBD for comparative studies of CdS-buffer replacement of ZnO/CdS/Cu(In,Ga)Se 2 /Mo/glass solar-cells. ZnSe films deposited by EBD, at e-beam energies 11keV, on polycrystalline CuGaSe 2 , at 400 • C, were microcrystalline, with average grain-sizes 100nm, and (111)zinc-blende(ZB)-structure. The films exhibited compressive mismatch-stresses σ = −0.9 GPa. The absorption coefficient α = 6.2 × 10 3 cm −1 and the energy band-gap E g = 2.69eV indicated optical transparency suitable for buffer/solar-absorber configurations. In CBD, zinc-sulfate_(ZnSO 4 ) solution with selenourea_(SeC(NH 2 ) 2 ), ammonia_(NH 3 ), hydrazine_(NH 2 NH 2 ), and sodium-sulfite_(Na 2 SO 3 ) were processed at solution-bath temperature 70 • C. The growth-rates of ZnSe on glass_(1.2nm/min), epitaxial_CuGaSe 2 /GaAs(001)_(7.4nm/min), and polycrystalline_Cu(In,Ga)Se 2 /Mo/glass_(17.6nm/min) were strongly facilitated by substrate order, orientation, and conductivity. Mismatch-stresses switched from compressive σ = −0.5GPa of ZnSe_on_epitaxial_CuGaSe 2 /GaAs(001) to tensile σ = 1.1-1.9GPa of ZnSe_on_polycrystalline_Cu(In,Ga)Se 2 /Mo/glass. Film crystallinity was improved by post-growth annealing (300 • C,2h,Ar/N 2 ). The energy band-gap E g = 2.73-2.87eV was broadened with the increase of annealing-time. ZnSe films were deposited by CBD on polycrystalline Cu(In,Ga)Se 2 with ( 101)wurtzite(WZ)-structure. Following process-optimization, high quality ultra-thin films with (ZB)-structure were produced. The quality assessment of ZnSe films processed by cost-effective, easy-applicable, fast-rate, large-area, moderate-temperature CBD competes with that of EBD processed films and opens the perspective for strain-free CIGS TFSCs by lattice-matching of ZB/WZ-ZnSe bilayer to chalcopyrite sub-layer and ZnO over-layer.

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Section: Resultsmentioning

confidence: 99%

“…In case of ZnSe deposited by CBD on polycrystalline quaternary selenides Cu(In,Ga)Se 2 (Fig. 22 and 23), however, the usually observed ZnSe Bragg reflection peaks overlap with the peaks of the chalcopyrite selenide and its secondary copper diselenide phases 122,123,142,145 as demonstrated in Fig. 22a.…”

Section: Cbd Znse On Polycrystallinementioning

confidence: 95%

Vacuum and Liquid-Phase Processing of ZnSe Buffer-Layer for Chalcopyrite Absorber Based Photovoltaic Technology

Papadimitriou

2018

ECS J. Solid State Sci. Technol.

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“…Considering the above discussions, we suggest that, upon doping of Al atoms free electrons are generated 38) in the HOMO of AZNRs system shifting the HOMO energy level to higher energy and consequently, the HOMO-LUMO energy gap between AZNRs and CO became considerably lower, which is sufficient to make π-bonding between them. However, without Al-doping i.e.…”

Section: 2mentioning

confidence: 92%

“…21) Generally, HOMO of ZNR is π bonding and act as a good donor orbital for interacting with the un-filled π* orbitals of LUMO of CO. Due to Al-doping in the ZnO crystal lattice, Al atom is ionized into Al 3+ . 38) The Al 3+ ion from an Al atom substitutes the Zn 2+ ion of a Zn atom and releases a free electron 39,40) in the valence band of ZnO. With increasing the Al-doping, the released free electrons were gradually increased 40) in the valence band and thus the valence band maximum level shifted upwards and reduced the band gap 41,42) between valence band and conduction band.…”

Section: 2mentioning

confidence: 99%

Highly sensitive CO sensor based on Al-doped-ZnO nanorods-coated resonant microcantilevers

Aprilia

Nuryadi²,

Hosoda

et al. 2020

Jpn. J. Appl. Phys.

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A highly sensitive (at the picogram order) Al-doped-ZnO nanorods (AZNRs)-coated resonant microcantilever (MC) for carbon monoxide (CO) gas sensing, operable at ambient temperature and under humid condition was synthesized. The ZnO nanorods were grown on the MC surface by using the hydrothermal method and doped by aluminum (Al). The sensitivities of un-doped and AZNRs for various CO gas concentrations were investigated by measuring the changes in the resonant frequencies and the Q-factor analysis of the vibrating MCs. The mechanisms of the remarkable enhancement of the sensitivity of the AZNRs-coated-microcantilever to CO were thoroughly investigated and discussed on the basis of energy gap between the highest occupied molecular orbital-lowest occupied molecular orbital of AZNRs and CO, active surface area of AZNRs, and the interaction of water vapor on AZNRs surface with CO.

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“…The field of ZnO research and applications has widely been scanned, in the past and at present, as already reported in our recent publications [1][2][3][4]. Our efforts are primarily focused on the engineering of the structural, optical, and electrical properties of chalcopyrite semiconductor based thin-film solar cells (TFSCs) [5][6][7][8][9][10][11][12][13] with Cu(In,Ga)Se 2 (CIGS) absorber [1], ZnSe buffer [4], and ZnO window, front-contact, and antireflective coating (ARC) [2,3] processed by electrochemical deposition (ECD) techniques. Electrodeposition with cost-effective, large-area, moderate-temperature, fast-rate performance can be scaledup to industrial processes.…”

Section: Introductionmentioning

confidence: 92%

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Papadimitriou

2022

Micromachines

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Resistivity and transparency of zinc-oxide layers (ZnO) for chalcopyrite photovoltaic technology applications were engineered by activation of the Burstein–Moss (BM) effect at high concentrations of aluminium (Al) and indium (In) dopant. The Al:ZnO and In:ZnO layers were processed by cost-effective, large-area, fast-rate electrochemical deposition techniques from aqueous solution of zinc nitrate (Zn(NO3)2) and dopant trichlorides, at negative electrochemical potential of EC = (−0.8)–(−1.2) V, moderate temperature of 80 °C, and solute dopant concentrations of AlCl3 and InCl3 up to 20 and 15 mM, respectively. Both Al:ZnO and In:ZnO layers were deposited on Mo/glass substrates with ZnO and ZnO/ZnSe buffers (Al:ZnO/ZnO/Mo/glass, In:ZnO/ZnO/ZnSe/Mo/glass), respectively. Based on the band-gap energy broadening of Al:ZnO and In:ZnO originated by the BM effect, maximum carrier concentrations of the order 1020 and 1021 cm−3, respectively, were determined by optical characterization techniques. The (electrical) resistivity values of Al:ZnO calculated from optical measurements were commensurate with the results of electrical measurements (10−4 Ohm×cm). In both cases (Al:ZnO and In:ZnO), calibration of carrier density in dependence of solute dopant concentration (AlCl3 and InCl3) was accomplished. The p–n junctions of Au/In:ZnO/ZnO/ZnSe/CIGS/Mo on glass substrate exhibited current–voltage (I–V) characteristics competing with those of crystalline silicon (c-Si) solar cells.

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Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Cited by 6 publications

References 87 publications

Vacuum and Liquid-Phase Processing of ZnSe Buffer-Layer for Chalcopyrite Absorber Based Photovoltaic Technology

Vacuum and Liquid-Phase Processing of ZnSe Buffer-Layer for Chalcopyrite Absorber Based Photovoltaic Technology

Highly sensitive CO sensor based on Al-doped-ZnO nanorods-coated resonant microcantilevers

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

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