Optimization of dual-threshold independent-gate FinFETs for compact low power logic circuits

Zhang, Xuqiang; Hu, Jianping; Luo, Xiaoyan

doi:10.1109/nano.2016.7751552

Cited by 12 publications

(5 citation statements)

References 14 publications

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“…Device. One of the most important parameters of the transistor is the threshold voltage (V th ), which directly affects the drain current of the transistor [12]. e threshold voltage of a transistor can be approximated by…”

Section: Reshold Voltage Of the Psf-tifetmentioning

confidence: 99%

A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

Jiang

2022

Journal of Electrical and Computer Engineering

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In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels. The two horizontal subchannels are manufactured over the vertical subchannel by using smart-cut process. The top gate is located above the two horizontal subchannels. The front gate and back gate below the two horizontal subchannels are located on the two sides of the vertical subchannel, respectively. Each of the all three gates has roughly the same control area on the channel, and thus, the all three gates have roughly the same effect on the device channel. Due to its special structure, the new device is logically equivalent to three conventional single-input transistors in parallel. Compared with the traditional field effect transistors with a single-input terminal, the new device can be used to simplify the circuit with the reduced transistor number. The impacts of body thickness, gate oxide thickness, and work function on device performance are investigated, and then the device optimizations are carried out. The current characteristic of the device is theoretically analyzed. Silvaco TCAD simulations show that the theoretical analysis agrees well with the TCAD simulation results. This work explores the feasibility of multi-input devices, which would facilitate its development.

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Section: Reshold Voltage Of the Psf-tifetmentioning

confidence: 99%

A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

Jiang

2022

Journal of Electrical and Computer Engineering

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“…Compared with single-gate devices, such as CMOS or CG FinFET, DTIG FinFET can design more flexible circuits by using of the low-threshold (low-V th ) and high-threshold (high-V th ) devices [2,3,9,11,20]. We have built a mini DTIG FinFET logic cells library for further using and as shown in Figure 1 are two examples and their CG comparisons.…”

Section: Dtig Finfet Cell Librarymentioning

confidence: 99%

“…The synthesis tools, such as commercial tools like Synopsys Design Compiler (DC), public-domain tools like ABC [8], and synthesis algorithms like factorizationbased methods, usually utilizing these single-gate standard cell libraries to optimize the circuit topology. However, according to our research, DTIG FinFET-based circuits have excellent performances and can be used in modern VLSI circuits [9][10][11]. So it has an emerging need to develop a comprehensive method based on DTIG FinFETs.…”

Section: Introductionmentioning

confidence: 96%

BDD-Based Topology Optimization for Low-Power DTIG FinFET Circuits

Zhang

et al. 2019

Active and Passive Electronic Components

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This paper proposed a logic synthesis method based on binary decision diagram (BDD) representation. The proposed method is optimized for dual-threshold independent-gate (DTIG) FinFET circuits. The algorithm of the BDD-based topology optimization is stated in detail. Some kinds of feature subgraph structures of a BDD are extracted by the extraction algorithm and then fed to mapping algorithm to get a final optimized circuit based on predefined DTIG FinFET logic gates. Some MCNC benchmark circuits are tested under the proposed synthesis method by comparing with ABC, DC tools. The simulations show that the proposed synthesis method can obtain performance improvement for DTIG FinFET circuits.

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“…However, previous studies have shown that designing a circuit with devices with multiple input terminals is more flexible and efficient than using single-input ones [4,5]. The two-input low-threshold FinFET device proposed in the literature [6][7][8][9][10] is equivalent to two parallel transistors, while the two-input high-threshold FinFET device is equivalent to two series transistors. Therefore, the circuit can be simplified to reduce the transistor count by using two-input low-threshold and high-threshold FinFETs, thus reducing power consumption and the chip area.…”

Section: Introductionmentioning

confidence: 99%

T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)

Chen

et al. 2020

Micromachines

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In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical channel. The T-shaped channel structure increases the coupling area between the top gate and the front and back gates, which improves the ability of the gate electrodes to control the channel. What’s more, it makes the top gate have almost the same control ability for the channel as the front gate and the back gate. This unique structure design brings a unique function in that the device is turned on only when two or three inputs are activated. Silvaco technology computer-aided design (TCAD) simulations are used to verify the current characteristics of the proposed Ti-TcFET. The current characteristics of the device are theoretically analyzed, and the results show that the theoretical analysis agrees with the TCAD simulation results. The proposed Ti-TcFET devices with three input terminals can be used to simplify the complex circuits in a compact style with reduced counts of transistors compared with the traditional complementary metal–oxide–semiconductor/ fin field-effect transistors (CMOS/FinFETs) with a single input terminal and thus provides a new idea for future circuit designs.

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Optimization of dual-threshold independent-gate FinFETs for compact low power logic circuits

Cited by 12 publications

References 14 publications

A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

BDD-Based Topology Optimization for Low-Power DTIG FinFET Circuits

T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)

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