Optimization of crystal growth with diffusion

Abstract

Abstract. A crystal growth process involving diffusion in a half-space is studied. Both the diffusion coefficient and the interface reaction term are assumed to depend on a control parameter that is (e.g.) a function of temperature. The thickness of the deposited film after a given time or the time to reach a certain thickness is to be optimized. The full Stefan problem is not considered and the diffusion coefficient is assumed to vary slowly with the parameter.