Optimization of alternating-current thin-film electroluminescent displays

Abstract

Different factors affecting the performance of alternating-current thin-film electroluminescent ͑ACTFEL͒ devices are discussed. The Chen-Krupka model of electron transport was applied to examine the case of non-uniform distribution of the dopant concentration in the active layer. Based on the results, a ZnS doping profile is proposed which incorporates higher doping at the interfaces than in the bulk. Also, the asymmetry in the excitation efficiency of electrons near the two insulator-semiconductor interfaces ͑ISIs͒ of ACTFEL devices was studied and was ascribed to the difference in the interface quality arising from the choice of insulating material and to the selection of the annealing process. The role of the space charge stored near the ISI and the influence of drive conditions on the operational characteristics of the device are discussed.

Near‐field measurement of ZnS:Mn nanocrystal and bulk thin‐film electroluminescent devices

“…Since, different techniques have been developed for nanocrystal fabrication (Ishizumi et al , 2004; Young R.D. et al , 2006) and many studies of electro‐optical properties of semi‐conductor nanocrystals doped with luminescence centres were presented (Krasnov et al , 1998; Zhu et al , 2000; Bender et al , 2002 ) . Hitherto almost all measurements on the ACTEL devices were performed in the far‐field range.…”

Characteristics of aluminum oxinitride film grown by plasma‐enhanced atomic layer deposition as the insulator of an electroluminescent device

“…3 Y 2 O 3 and Ta 2 O 5 layers were studied to improve the luminance properties; however, SiON and Si 3 N 4 layers were needed in order to prevent ion and moisture penetration. 4,5 Therefore, it is inevitable that another insulator layer will need to be inserted when using insulators with high dielectric constants in order to maintain stability.…”