Optimization of a-Si1−xCx: H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devices

Demichelis, Francesca; Crovini, G.; Pirri, Candido Fabrizio; Tresso, Elena Maria; Amato, Giampiero; Coscia, U.; Ambrosone, G.; Rava, P.

doi:10.1016/0040-6090(94)90440-5

Cited by 30 publications

(14 citation statements)

References 15 publications

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“…The peak located at 558.74 cm À1 corresponds to phone mode of hexagonal GaN crystal, which is similar to the results of Li [6]; the peak at 608.12 cm À1 is associated with the vibration absorption of substituted carbon in the silicon lattice [17] and the peak at 1093 cm À1 corresponds to the Si-O-Si asymmetric stretching vibration absorption due to the oxidation of the silicon substrate [18]. No Ga-O bond is shown in Figure 3; it can be seen that under this condition Ga 2 O 3 reacted with NH 3 completely to generate hexagonal GaN crystal.…”

Section: Microstructure and Components Analysissupporting

confidence: 69%

Synthesis of GaN nanowires by CVD method: effect of reaction temperature

Shi

Wang

Xue

2011

Journal of Experimental Nanoscience

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GaN nanowires are fabricated on Si substrates by ammoniating Ga 2 O 3 /NiCl 2 thin films using chemical vapour deposition method. The influence of reaction temperature on microstructure, morphology and optical properties of GaN nanowires is characterised by X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectrophotometer, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy and photoluminescence. The results demonstrate that the GaN nanowires are single crystalline and exhibit hexagonal wurtzite symmetry. The best crystalline quality was achieved for an reaction temperature of 1150 C for 15 min. The growth process follows vapour-liquid-solid mechanism and Ni plays an important role as the nucleation point and as a catalyst.

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Section: Microstructure and Components Analysissupporting

confidence: 69%

Synthesis of GaN nanowires by CVD method: effect of reaction temperature

Shi

Wang

Xue

2011

Journal of Experimental Nanoscience

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“…The band located at 608.94 cm -1 is associated with the local vibration of substituted carbon in the Si crystal lattice (Ai et al, 2007), whereas the band located at 1102.31 cm -1 is attributed to the Si-O-Si asymmetric stretching vibration because of the oxygenation of Si substrate (Sun,1998). There is no Ga-O bond and other absorption band in the spectrum (Demichelis, 1994), therefore, Ga 2 O 3 films react with NH 3 completely at 950 °C for 15 min and form hexagonal type GaN crystal, which is the same as the results of the XRD. The Ga-N bond intensity of the sample whose ammoniating time is 20 min is stronger than those of the other two samples, which proves the sample has the highest crystalline quality, and is also the same as the results of the XRD.…”

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confidence: 72%

GaN Nanowires Fabricated by Magnetron Sputtering Deposition

Shi¹

2011

Nanowires - Fundamental Research

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“…[14] There is no Ga-O bond and other absorption band in the spectrum; [15] therefore, Ga 2 O 3 films react with NH 3 completely at 1223 K (950°C) for 15 minutes and form hexagonal type GaN crystal, which is the same as the results of the XRD. The Ga-N bond intensity of the sample whose ammoniating time is 20 minutes is stronger than those of the other two samples, which proves the sample has the highest crystalline quality and is also the same as the results of the XRD.…”

Section: Resultsmentioning

confidence: 74%

GaN Nanorods Catalyzed with Mo: Effect of Ammoniating Time on Microstructure, Morphology, and Optical Properties

Shi

Xue

2010

Metall Mater Trans A

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GaN nanorods have been successfully grown on Si (111) substrates by magnetron sputtering through ammoniating Ga 2 O 3 thin films catalyzed with Mo. The influence of the ammoniating time on the growth of GaN nanorods was analyzed, in particular, by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, Fourier transform infrared (FT-IR) spectrometer, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectrum. The results demonstrate that the GaN nanorods are single crystal with hexagonal wurtzite structure, which have high crystalline quality. The GaN nanorods after ammoniation at 1223 K (950°C) for 20 minutes have good emission properties and the highest crystalline quality with 100-to 200-nm diameter and several-micron length. The growth direction of these nanorods is along the orientation of (100) crystal plane. A small red shift occurs because of the band-gap change caused by the tensile stress of the one-dimensional GaN nanorods along the axial direction.

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Optimization of a-Si1−xCx: H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devices

Cited by 30 publications

References 15 publications

Synthesis of GaN nanowires by CVD method: effect of reaction temperature

Synthesis of GaN nanowires by CVD method: effect of reaction temperature

GaN Nanowires Fabricated by Magnetron Sputtering Deposition

GaN Nanorods Catalyzed with Mo: Effect of Ammoniating Time on Microstructure, Morphology, and Optical Properties

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