Optimization AlGaN/GaN HEMT with Field Plate Structures

Shi, Ningping; Wang, Kejia; Zhou, Bing; Weng, Jiafu; Cheng, Zhiyuan

doi:10.3390/mi13050702

Cited by 16 publications

(6 citation statements)

References 18 publications

(20 reference statements)

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“…The reason is as follows: the introduction of the F-FP will cause slight changes in the gate-to-source capacitance and drain-to-gate capacitance of the device, and it only has a minor impact on the DC characteristics of the device. [32][33][34] Due to the positive bias of the F-FP (i.e., no channel depletion). 35,36 On the other hand the simulation is performed under ideal conditions.…”

Section: Simulation and Discussionmentioning

confidence: 99%

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

Wang,

Cai,

Tian

et al. 2024

ECS J. Solid State Sci. Technol.

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A simulation model of a depletion-mode (D-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) was constructed by Silvaco ATLAS technology computer-aided design (TCAD) simulation, which employs an epitaxial drift layer grown on a sapphire substrate. On this basis, the floating field plate (F-FP) structure based on the gate-pad-connected field plate (P-FP) was proposed to improve the breakdown characteristics of the device, which was easily prepared. The working principle of F-FP was investigated with the help of the device with one F-FP, based on the principle that the number of floating field plates increases on an optimized floating field plate structure. Subsequently, the devices with two and three floating field plates were simulated in turn, and the optimal structural parameters of the three F-FPs device were finally obtained, and the breakdown voltage was 3800 V. In addition, it was found that the device breakdown voltage increased by approximately 500-600 V for each additional floating field plate.

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Section: Simulation and Discussionmentioning

confidence: 99%

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

Wang,

Cai,

Tian

et al. 2024

ECS J. Solid State Sci. Technol.

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“…This contributes to the device’s longevity and stability. The common choices of the metal for the gate field plate are Ni/Au [ 41 ] or Ti/Au [ 42 ], both of which have excellent conductivity and adhesion.…”

Section: Devices’ Fabricationmentioning

confidence: 99%

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Liu

Chen

et al. 2023

Micromachines

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A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high performance, obtaining low-damage techniques in gate recess processing has so far proven too challenging. In this letter, we demonstrate a high current density and high breakdown down voltage of a MIS-HEMT with a recessed gate by the low damage gate recessed etching of atomic layer etching (ALE) technology. After the remaining 3.7 nm of the AlGaN recessed gate was formed, the surface roughness (Ra of 0.40 nm) was almost the same as the surface without ALE (no etching) as measured by atomic force microscopy (AFM). Furthermore, the devices demonstrate state-of-the-art characteristics with a competitive maximum drain current of 608 mA/mm at a VG of 6 V and a threshold voltage of +2.0 V. The devices also show an on/off current ratio of 109 and an off-state hard breakdown voltage of 1190 V. The low damage of ALE technology was introduced into the MIS-HEMT with the recessed gate, which effectively reduced trapping states at the interface to obtain the low on-resistance (Ron) of 6.8 Ω·mm and high breakdown voltage performance.

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“…A protective passivation layer of Si 3 N 4 is used to prevent surface state contamination and traps 25,26,27 . The parasitic capacitance under the gate terminal is lowered due to its reduced size and smaller field plate area 28–31 . The proposed device employing without field‐plate with gate recessed depths of 25, 30, and 35 nm and with field‐plate structure of 30 nm recessed gate depth are taken into consideration in this piece of research.…”

Section: Device Structure and Simulation Modelsmentioning

confidence: 99%

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Rao

Singh²,

Lenka

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (f T , f max ) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These f T , f max and JFOM demonstrate that the proposed HEMT on β-Ga 2 O 3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.

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Optimization AlGaN/GaN HEMT with Field Plate Structures

Cited by 16 publications

References 18 publications

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

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Optimization AlGaN/GaN HEMT with Field Plate Structures

Cited by 16 publications

References 18 publications

Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate

Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

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Product

Resources

About

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications