Optimisation of discharge parameters for the analysis of high purity silicon wafers by magnetic sector glow discharge mass spectrometry

Milton, Dafydd; Hutton, Robert C.

doi:10.1007/bf00633565

Cited by 16 publications

(5 citation statements)

References 12 publications

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“…88 Limits of detection have been also calculated for different elements, including light elements and nonmetals, on high-purity silicon wafers using the VG 9000 GDSFMS instrument. 89 From the first publications of detection limits, no general progress in improving the detection limits has been achieved with the introduction of new generations of instruments. One significant improvement of the Element GD versus the VG 9000, however, was the possibility to significantly improve analysis speed.…”

Section: Limits Of Detection 87 (See Also Chapter 10)mentioning

confidence: 99%

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Glow Discharge Mass Spectrometry

Venzago

Pisonero

2014

Sector Field Mass Spectrometry for Elemental and Isotopic Analysis

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GDMS is based on a glow discharge ion source, which generates ions through sputtering (cathodic sputtering) of a solid surface and ionisation (electron impact or Penning ionisation) by a glow discharge plasma. A glow discharge plasma is formed by the passage of an electric current through a low-pressure gas. The ions are separated in a mass spectrometer and finally recorded at a detector. GDMS is a method for the direct determination of trace elements in solid states providing traceelement information of solid samples. Beside the direct current (DC) mode, analytical glow discharges can also be operated in a radiofrequency (RF) mode, most often applied for analysis of nonconducting samples (Figures 13.1 and 13.2).

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Section: Limits Of Detection 87 (See Also Chapter 10)mentioning

confidence: 99%

“…89,121 The boom in the production of photovoltaic materials in the years from 2005 onwards led to an increase in GDMS applications. GDMS could never obtain a real breakthrough in the semiconductor industry since the sensitivity of GDMS is not sufficient to characterise semiconductor quality material.…”

Section: Refractory Metalsmentioning

confidence: 99%

Glow Discharge Mass Spectrometry

Venzago

Pisonero

2014

Sector Field Mass Spectrometry for Elemental and Isotopic Analysis

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“…Glow discharge mass spectrometry (GD-MS), which is an efficient direct solid analysis method, [2][3][4][5][6][7][8] has been developed rapidly since the 1980s, 9 especially in the trace analysis of high pure metal and semiconductor materials. [10][11][12][13][14][15][16][17][18][19][20] the advantages of GD-MS are its ability to determine almost all elements, superior detection limits, multi-elemental analysis, little matrix effect and wide linear dynamic range. [21][22][23] the interferences, which include isobars, multi-charge ions and multi-atom ions generated by the discharge gas, matrices and alloy elements, have a serious effect on the determination of trace elements, so the main problem is to eliminate the mass spectral interference for the determination of trace elements in the superalloy by GD-MS.…”

Section: Journal Of Mass Spectrometrymentioning

confidence: 99%

Determination of Trace Elements and Correction of Mass Spectral Interferences in Superalloy Analyzed by Glow Discharge Mass Spectrometry

Xing

Wang

2008

Eur J Mass Spectrom (Chichester)

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Mass spectral interference was investigated systematically during the determination of trace elements in superalloy by glow discharge mass spectrometry (GD-MS); moreover the main mass spectral interference and interference level of isotopes were provided in detail. According to the mass spectral interference of elements, different methods were selected for interference correction. The effects of mass spectral interference were removed efficiently by using correction methods such as selecting isotopes without interference, matching sample matrices and deducing interference with multivariable linear regression. The determination results of three superalloy samples show that trace elements such as B, Mg, Ga, As, Ag, In, Sn, Sb, Te, Tl, Pb and Bi were determined successfully after interference correction.

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“…resolution of GD-QMS makes it impossible to separate molecular ion interferences from analytical ions with the same nominal mass [11]. In practical application, GDMS is used to determine the high pure metal and semiconductor material [10,[12][13][14][15][16][17][18][19][20][21], but seldom applied in steel analysis. In this study, 15 elements of stainless steel were determined by GD-QMS, and the sample analysis has obtained the satisfactory results.…”

Section: Introductionmentioning

confidence: 99%