Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

Lahreche, H.; Vennéguès, P.; Tottereau, O.; Laügt, M.; Lorenzini, P.; Leroux, M.; Beaumont, B.; Gibart, P.

doi:10.1016/s0022-0248(00)00478-4

Cited by 102 publications

(64 citation statements)

References 42 publications

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“…Hydrogen desorption, if overdone, also leads to etching of the Si surface. 3,13,14 Thus, as will also be shown in this paper, sub-optimal desorption results in incomplete oxide removal and excessive desorption results in surface damage. This necessitates the use of an optimum time-temperature thermal desorption step, with or without ex-situ oxide removal.…”

mentioning

confidence: 53%

“…2 It was recognized early on that the quality of GaN layers grown on these AlN buffers are dependent upon the buffer layer deposition parameters, primarily growth temperature (900-1200C) and thickness (10-500 nm). [2][3][4][5][6][7][8] However, the presence of an oxide free and smooth Si surface favouring epitaxy also plays a major role in determining the quality of AlN buffers deposited and hence on the subsequent AlGaN-GaN epilayers. Ex-situ treatment, using HF/buffered HF, is used either as a stand-alone pre-treatment 6,9,10 or in conjunction with an in-situ thermal desorption step in a hydrogen ambient 2,3,11,12 for native oxide removal from Si.…”

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confidence: 99%

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An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Chandrasekar

Mohan

Bardhan

et al. 2013

Applied Physics Letters

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The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus >1 GPa) and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface and crystal quality.

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confidence: 53%

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confidence: 99%

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Chandrasekar

Mohan

Bardhan

et al. 2013

Applied Physics Letters

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“…Depending on the AlN growth temperature, growth mode of GaN can be either two dimensional or three dimensional (2D or 3D) and structural, electronic and optical properties are consequently changed. 8 While, the growth of N-rich nucleation layer (Al/N <1) resulted in significant reduction in buffer leakage with a power added efficiency of 62%. 9 It has been reported that the sheet resistance of GaN as high as 10 11 Ω/Sq.…”

Section: Introductionmentioning

confidence: 99%

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

2014

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The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

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“…During the last years light emitting diodes, UV detectors and high-electron-mobility and field-effect transistors have been fabricated from GaN on Si proving real possibilities [2 -8]. III-N thin films have been grown on Si by metalorganic chemical vapour deposition (MOCVD) [9][10][11] as well as molecular beam epitaxy (MBE) [12][13][14]. The substrate chosen is Si(111) which exhibits the same 3m symmetry like GaN(0001).…”

Section: Introductionmentioning

confidence: 99%

“…The amorphous layer may result in a polycrystalline and defected epilayer [15,16], and recent efforts have achieved its elimination mainly by employing Al pre-deposition and a low-temperature AlN buffer layer, resulting in interface of good structural quality [15 -21]. However transmission electron microscopy (TEM) observations on such epilayers have shown that they contain large densities of defects, mainly threading dislocations and inversion domain boundaries (IDBs), as well as stacking faults, pinholes, voids, hillocks, and grain boundaries [10,11,16,17,22,23]. IDBs in particular have been shown to emanate from substrate surface steps as well as from the AlN/GaN interface [22,23].…”

Section: Introductionmentioning

confidence: 99%

Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system

Dimitrakopulos

Sanchez

Komninou

et al. 2005

Physica Status Solidi (b)

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The role of substrate steps in the introduction of transformations of interfacial structure and inversion domain boundaries is studied for the GaN/AlN/Si (0001)/(111) epitaxial system using topological analysis and high resolution transmission electron microscopy. This epitaxial system can exhibit distinct interfacial structures at the AlN/Si interface, and transformations from one to the other can be introduced by the steps on the substrate surface. The interfacial steps can exhibit dislocation character and they may accommodate the coexistence of energetically degenerate as well as distinct interfacial structures. A substrate step is identified as a potential cause for pinhole formation. Inversion domain boundaries accommodate interfacial transformations when they emanate from the epitaxial interface and can reduce the coherency dislocation character of interfacial steps. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

Cited by 102 publications

References 42 publications

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system

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