Optimal Semiconductors for 3H and 63Ni Betavoltaics

Abstract

Betavoltaic power sources based on the conversion of radioisotope energy to electrical power are considered an appealing option for remote applications due to extended period of operation and high energy densities. However, to be competitive with other power sources, their efficiency must be increased. This can be done through optimization of the beta source and selection of the semiconductor absorber. This paper evaluates available on the market and developing wideband gap semiconductors as prospective absorbers with 3 H and 63 Ni sources. Simulation results indicate that among wide band gap materials 4H-SiC and diamond are two optimal semiconductors due to the combination of good coupling efficiencies with isotope sources and good electronic transport properties. Additionally, having good coupling efficiency, an ultra-wide bandgap, and the capability for both n- and p-type doping, c-BN is a promising material for betavoltaic applications.

Nuclear batteries: Current context and near‐term expectations

“…Monte Carlo simulations were used to compare the performances of a series of wide bandgap converters in planar configuration under 3 H and 63 Ni irradiations 76 …”

“…Very recently also polycrystalline CdTe layers have been tested and proposed for conversion of the 3 H emissions 76,77 …”

“…Conversely some Ga‐containing direct bandgap compounds (GaAs, GaN, Ga 2 O 3 and In 1−x Ga x P) showed low coupling efficiency with 3 H and 63 Ni sources 76,77 …”

“…Monte Carlo simulations were used to compare the performances of a series of wide bandgap converters in planar configuration under 3 H and 63 Ni irradiations. 76 The analysis involved: Si, GaAs, In 0.49 Ga 0.51 P, Al 0.53 In 0.47 P, 4H-SiC, 2H-GaN, Al 0.5 Ga 0.5 N, β-Ga 2 O 3 , Al 0.75 Ga 0.25 N, Diamond, 2H-AlN and c-BN. On the basis of the energy spectra and of self-absorption effects, nand p-type doped 4H-SiC and diamond have been found to be the best performing materials for β-voltaics based on 3 H and 63 Ni radioisotopes.…”

A diamond gammavoltaic cell utilizing surface conductivity and its response to different photon interaction mechanisms

“…However, the same effect is produced for photon energies outside of the visible range, and research has sporadically appeared to investigate the potential of photovoltaics for much higher photon energies: gammavoltaics. Other radiovoltaic devices, namely alphavoltaics [1] and betavoltaics [2][3][4][5][6], which generate electricity under illumination from alpha and beta particles respectively, are often intended for use as portable micropower devices, with incorporated radioisotope sources. Gammavoltaic devices are different, as the shielding requirements of gamma isotopes are much greater.…”