Optimal process parameters for phosphorus spin-on-doping of germanium

Boldrini, V.; Carturan, S.; Maggioni, G.; Napolitani, E.; Napoli, D. R.; Camattari, Riccardo; Salvador, D. De

doi:10.1016/j.apsusc.2016.09.134

Cited by 20 publications

(24 citation statements)

References 28 publications

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“…The phenomenological evaluation through such a model will provide a useful framework to explore the possibility of finding doping process windows while keeping the contamination under an acceptable limit. The first hypothesis of the model is a standard Arrhenius relation between the equilibrium impurity/defect concentration achieved with long annealing treatments, neq, and temperature: neq = n0 exp(-Eact/(kBT)) (5) where n0 is the concentration pre-factor and Eact is the activation energy. The second hypothesis is a first order non-equilibrium dynamics, according to which the growth rate of dopant contaminants is proportional to their "distance" from the equilibrium: dn/dt = r (n eqn) (6) where n is the actual amount of contaminant and r is the contamination rate constant, which fixes the velocity by which the equilibrium is restored.…”

Section: Phenomenological Model Of Contamination Processmentioning

confidence: 99%

“…For this purpose, we analyzed the diffusion process of P emitted by SOD and Sb diffusion from a remote source starting from diffusion profiles already published in Ref. [5] and [6].…”

Section: Process Window For Standard Doping Annealingmentioning

confidence: 99%

“…Standard doping techniques include the use of high temperature annealing treatments, which could cause the electrical activation of doping defects or impurities inside the whole crystal volume. In the perspective of finding more suited doping techniques for the formation of the n-type contact in γ-ray HPGe detectors, we developed P and Ga diffusion from SOD sources [5], Sb equilibrium diffusion from a remote sputtered source [6] and laser thermal annealing (LTA) diffusion of sputtered Sb [2]. All of them require high temperature annealing treatments, hence, to preserve the bulk purity thus saving the detector operation, the issue of impurity activation should be faced.…”

Section: Introductionmentioning

confidence: 99%

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Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Boldrini

Maggioni

Carturan

et al. 2018

J. Phys. D: Appl. Phys.

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High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (≤ 2·10 -4 ppb of doping impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the goal of improving the device performance and expanding the application fields, in this paper many alternative doping processes are evaluated, in order to verify their effect on the purity of the material. In more detail, we investigated the electrical activation of contaminating doping defects or impurities inside the bulk HPGe, induced by both conventional and non-conventional surface doping processes, such as B ion implantation, P and Ga diffusion from Spin-On Doping (SOD) sources, Sb equilibrium diffusion from a remote sputtered source and laser thermal annealing (LTA) of sputtered Sb. Doping defects, thermallyactivated during high temperature annealing, were characterized through electrical measurements. A phenomenological model describing the contamination process was developed and used to analyze the diffusion parameters and possible process thermal windows. It resulted that out-of-equilibrium doping processes confined to the HPGe surface have higher possibilities to be successfully employed for the formation of thin contacts, maintaining the pristine purity of the bulk material. Among them, laser thermal annealing turned out to be the most promising.

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Section: Phenomenological Model Of Contamination Processmentioning

confidence: 99%

“…For this purpose, we analyzed the diffusion process of P emitted by SOD and Sb diffusion from a remote source starting from diffusion profiles already published in Ref. [5] and [6].…”

Section: Process Window For Standard Doping Annealingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Boldrini

Maggioni

Carturan

et al. 2018

J. Phys. D: Appl. Phys.

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“…In the frame of this research, several passivation routes have been proposed and studied also by our group for HPGe detector developments [15][16][17][18][19][20][21].…”

Section: Hpge Gamma Detectorsmentioning

confidence: 99%

New Developments in HPGe Detectors for High Resolution Detection

Napoli¹,

Maggioni²,

Carturan³

et al. 2017

Acta Phys. Pol. B

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High-Purity Germanium (HPGe) detectors continue to be a fundamental tool in nuclear gamma spectroscopy. The tracking of the gamma interactions inside the HPGe crystals is opening a new era in the use of these detectors for both basic science and applications, but they have also shown that new R&D is necessary for the production of even better and more reliable highly segmented detectors. In this work, we present recent results obtained in the framework of a multidisciplinary research program in HPGe detector technologies and we discuss the influence of these studies on the use of HPGe detectors.

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“…More recently, Boldrini et al, 27 studying P doping of Ge using the spinon-doping technique and spike annealing at 600-750…”

Section: Methodsmentioning

confidence: 99%

Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Skarlatos

Ioannou‐Sougleridis

Barozzi

et al. 2017

ECS J. Solid State Sci. Technol.

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In this work we present a systematic study on post-implantation phosphorous diffusion control in Ge by co-implanted nitrogen in combination with various surface capping layers (Al2O3, SiO2 and Si3N4). Phosphorous has been implanted at low energy (11 keV) and high dose (1015 cm−2) in p-Ge (100) already implanted or not with low energy (10 keV−5 × 1014 cm−2) N2+. Flash Lamp Annealing (FLA) at 800–850°C for 20 ms in inert ambient has been used as post-implantation annealing scheme. In the absence of nitrogen, significant substrate damage and capping layer deterioration prevents a reliable comparison among the three capping materials. The presence of nitrogen in the Ge substrate, effectively suppresses the damage observed after the FLA. In this case, P diffusion is additionally retarded in the presence of Al2O3 as compared to SiO2 and Si3N4. The experimental results constitute a direct evidence of the action of the three capping layers as sinks for Ge vacancies with different interface recombination velocities. On the contrary, the nitrogen diffusion data suggest that interface recombination velocities of Ge interstitials are almost independent of the capping layer choice.

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Optimal process parameters for phosphorus spin-on-doping of germanium

Cited by 20 publications

References 28 publications

Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

New Developments in HPGe Detectors for High Resolution Detection

Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

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Optimal process parameters for phosphorus spin-on-doping of germanium

Cited by 20 publications

References 28 publications

Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

New Developments in HPGe Detectors for High Resolution Detection

Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

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Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering