Optimal Process Design for Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance
Hui Wang,
Jiabin Qi,
Xinyu Xie
et al.
Abstract:Ferroelectric hafnium and zirconium oxides have recently garnered significant attention due to their potential applications in in-memory computing. In this study, we present an optimized process design for a wake-up free 15 nm thick Hf0.5Zr0.5O2 (HZO) ferroelectric capacitor by fine-tuning the dual-oxygen process and incorporating oxygen annealing after post-metallization annealing (PMA). The optimized approach resulted in a competitive polarization of 28.6 μC/cm2, consistently exceeding 25 μC/cm2 at 3 V after… Show more
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