Optimal orientations of lithium niobate for resonator SAW filters

Naumenko, Natalya; Abbott, Ben

doi:10.1109/ultsym.2003.1293336

Cited by 7 publications

(8 citation statements)

References 2 publications

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“…Piezoelectric materials can be divided into three types: polycrystalline ceramics (LiNbO 3 and LiTaO 3 ), piezoelectric single crystal materials (quartz), and piezoelectric thin films (ZnO and AlN) [22]. The uniformity of ferroelectric materials such as LiNbO 3 and LiTaO 3 is crucial because these materials need polarization and optimal orientation at specified Euler angles [8]. Table 1 shows the material properties of common piezoelectric materials [19].…”

Section: Piezoelectricitymentioning

confidence: 99%

“…The surface acoustic wave (SAW) resonator is one example. The most existing acoustic wave resonators are those based on piezoelectric materials such as quartz (SiO 2 ) [6,7], lithium niobate (LiNbO 3 ) [8][9][10], and lithium tantalate (LiTaO 3 ) [11,12]. Quartz crystals have been dominating the market because of its accuracy, high quality factor and high temperature stability [13].…”

Section: Introductionmentioning

confidence: 99%

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Silicon Compatible Acoustic Wave Resonators: Design, Fabrication and Performance

Ralib¹,

Nordin²

2014

IIUMEJ

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Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip transceivers. Fabrication of acoustic wave resonators on silicon allows complete integration of a resonator with its accompanying circuitry.Â Integration leads to enhanced performance, better functionality with reduced cost at large volume production. This paper compiles the state-of-the-art technology of silicon compatible acoustic resonators, which can be integrated with interface circuitry. Typical acoustic wave resonators are surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators.Â Performance of the resonator is measured in terms of quality factor, resonance frequency and insertion loss. Selection of appropriate piezoelectric material is significant to ensure sufficient electromechanical coupling coefficient is produced to reduce the insertion loss. The insulating passive SiO2 layer acts as a low loss material and aims to increase the quality factor and temperature stability of the design. The integration technique also is influenced by the fabrication process and packaging.Â Packageless structure using AlN as the additional isolation layer is proposed to protect the SAW device from the environment for high reliability. Advancement in miniaturization technology of silicon compatible acoustic wave resonators to realize a single chip transceiver system is still needed. ABSTRAK: Kemajuan yang berterusan dalam teknologi tanpa wayar dan silikon telah menguatkan pertumbuhan yang menarik dalam produk tanpa wayar. Saiz yang besar bagi peralatan mekanikal bergetar seperti kristal kuarza menghalang pengecilan untuk merealisasikan peranti cip. Silikon serasiÂ gelombang akustik resonator mempunyai potensi yang besar untuk menggantikan unsur-unsur diskret kerana keupayaan untuk mengintegrasikan dengan litar yang disertakan itu. Integrasi ini membawa kepada peningkatan prestasi, fungsi yang lebih baik dengan pengurangan kos pada pengeluaran jumlah yang besar. Oleh itu, Karya ini mengkaji silikon resonator akustik yang serasi, yang bersepadu dengan muka litar untuk membolehkan integrasi yang lengkap. Resonator gelombang akustik yang digunakan adalah gelombang permukaan akustik ( SAW ) dan gelombang akustik pukal ( BAW ) resonator . Kriteria penting untuk menilai prestasi resonator seperti faktor kualiti, frekuensi resonans dan kehilangan sisipan juga digariskan dalam setiap kerja sebelumnya. Pemilihan bahan piezoelektrik yang sesuai adalah penting untuk memastikan pekali gandingan elektromekanik yang mencukupi dihasilkan untuk mengurangkan kehilangan sisipan. Lapisan tambahan pasif SiO2Â Â yang bertindak sebagai bahan rendah sisipan dipercayai meningkatkan faktor kualiti dan kestabilan suhu reka bentuk. Teknik integrasi juga dipengaruhi oleh proses fabrikasi dan pembungkusan. Struktur tanpa pembungkusan menggunakan AlN sebagai lapisan pengasingan tambahan itu dicadangkan untuk melindungi peranti SAW dari persekitaran untuk kebolehpercayaan yang tinggi. Banyak lagi kemajuan perlu dilakukan dalam pengecilan silikon serasi resonator gelombang akustik untuk merealisasikan sistem cip transceiver tunggal.KEYWORDS: RF-MEMS; piezoelectric; resonator; surface acoustic wave (SAW);bulk acoustic wave (BAW); FBAR

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Section: Piezoelectricitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon Compatible Acoustic Wave Resonators: Design, Fabrication and Performance

Ralib¹,

Nordin²

2014

IIUMEJ

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“…Similar changes were proposed to replace 64-LiNb cut. This idea was further developed by N. Naumenko and B. Abbott [3] who demonstrated that optimisation of the losses may demand different cut angles dependent on applied criteria. In all studied cases one can see the tendency that the mass-loading of the leaky cur substrate by heavy electrodes (with relatively low shear wave velocity in Al) is not only slowing down the wave but shifts the optimum angle of rotation of Y-cut to higher numbers.…”

Section: Introductionmentioning

confidence: 99%

P1L-1 Leaky Wave Cuts of LiNbO3 and LiTaO3 with Minimized Propagation Loss Due to Thin Layer

Plessky¹,

Koskela²,

Hong³

2006

2006 IEEE Ultrasonics Symposium

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It is well known that the propagation loss in leaky wave cuts on LiTaO 3 and LiNbO 3 depends on the geometry of Al electrodes. According to K. Hashimoto et al [1] the widely used cut of 36°-LiTaO 3 optimal for zero thickness of metal fingers was replaced by 42°LiTaO 3 for Al electrodes with h/λ=8% . Here we demonstrate theoretically that by introducing thin film (h diel /λ = 1% to 3%) sub-layer of hard material such as TiO 2 many combinations of cuts and Al electrode thickness can be optimised [2] in terms of minimization of propagation loss resulting from leakage of SAW energy into bulk by slow shear waves. High dielectric permittivity of mentioned materials is necessary to minimize the loss of coupling caused by separation of electrodes from the piezoelectric. For example, with sub-layer of 1.5% of TiO 2 classic 36° cut of LiTaO 3, according to this simulations, will show minimal "leaky" loss with 8% thick Al electrodes. Moreover, rarely used cut of 41°-LiNbO 3 , having substantial "leaky" losses but extremely strong coupling, can be transformed into zero leaky loss substrate with 2.5% thick TiO 2 layer and 7.5% Al electrodes on top of it. The proposed method allows to get low propagation loss on substrate with desired coupling coefficient, which makes the design of low loss filters more flexible ©

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“…Recently new orientations of LiNbO 3 were investigated [8] and the optimum cut Y+76 LiNbO 3 was suggested.…”

Section: B Resonators On Linbomentioning

confidence: 99%

“…6 The metal thickness is 0.055 wavelength, which gives minimum LSAW attenuation [8]. In the admittance calculations the LiNbO 3 constants [6] were used.…”

Section: B Resonators On Linbomentioning

confidence: 99%