The
stability of perovskite solar cells, especially at high temperature
(85 °C) conditions, is one of the most critical aspects to advance
practical application. All-inorganic perovskites, by substituting
the volatile organic compounds with cesium, have exhibited a promising
thermal resistance and energy conversion potentials. However, the
thermal stability of the all-inorganic perovskite solar cells is strongly
related to the phase transition of the perovskite as well as the thermal
resistance of each charge transport and collection layer. Herein,
we incorporated Eu(Ac)3 into the perovskite precursor to
fabricate photoactive γ-CsPbI2Br. The Eu3+ ions can associate with the negatively charged halide plumbates
in the solution and accumulate at the grain boundaries in the as-achieved
thin films, effectively reducing the nonradiative recombination centers
and stabilizing the γ-CsPbI2Br with moderate grain
size. A champion efficiency above 12% in an inverted device architecture
can be achieved. In the presence of Eu3+ ions, the phase
transition of the γ-CsPbI2Br to nonperovskite is
significantly mitigated and can be reversibly restored via thermal
repairing. Moreover, we thermally treat the electron transport [6,6]-phenyl-C61-butyric
acid methyl ester (PC61BM) layer prior to the device completion
to induce nanomorphology reorientation and replace the reactive Ag
electrode by inert Cu to prevent electrode corrosion by diffusive
halide ions from the perovskite. As a result, the thermal (at 85 °C,
time to 80% of the initial efficiency or t
80 ≈ 200 h) and moisture (relative humidity or RH = 40%, t
80 > 500 h) stability of the all-inorganic
CsPbI2Br solar cells can be remarkably enhanced.