Optimal design of antireflective layer for DUV lithography and experimental results

Abstract

A new methodology using the admittance diagram is proposed for optimization of an antireflective layer (ARt) and the simple ARt optimizer with its own 2D and 3D dynamic graphic tools is developed. Under the methodology, the overall dependency of the reflectivity on optical properties of ARLs can be viewed from a single 2D graph, and the tolerance of process step for the optimally designed ARL can be evaluated geometrically. And also, the optimal condition of an ARt for DUV lithography process is determined by our optimizer and its performance is simulated from our own lithography simulator based on rigorous vector theory. Finally, the effect of ARLs are investigated experimentally, and their results are compared with simulation results.

Light-Trapping Characteristics of Ag Nanoparticles for Enhancing the Energy Conversion Efficiency of Hybrid Solar Cells

“…For the antireflection film, a silicon dioxide or silicon nitride transparent film with a quarter of incident light wavelength must be prepared by using a physical or chemical procedure on the upper surface of the solar cells. − The other way is to prepare an antireflection structure on the upper surface of the solar cell. This structure is prepared by using the traditional methods including acid or alkali wet etching, reactive ion etching, photon/electron beam lithography, and mechanical grooving, on the silicon surfaces. − Fabrication of crystalline silicon solar cells consists of wafer slicing and texturing of its surface, and the texturing structure may reduce the light reflection. This means that more incident light is absorbed by multiple reflections and refractions on the surface of the valid texturing structure and that more and more photon-generated carriers are also obtained by light-trapping .…”