To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multimode interference (MMI) Mach-Zehnder interferometer (MZI) -based electro-optic (EO) switch is designed and optimized.Under the central operation wavelength of 1550 nm, the driving voltages of the designed switch are 0 and ±1.375 V, respectively, with a short active region length of 5 mm, and the characteristic impedance of the electrode is about 49.6 .The manufacture tolerance is analyzed for instructing the device fabrication. The results show that to realize ideal switching function, high fabrication accuracy on the buffer thickness, core thickness, electrode width and MMI waveguide width is extremely required, and a small voltage drift of -0.03 0.05 V is also expected for reducing the crosstalk to less than -30 dB. The allowed 3 dB bandwidth is 60 nm, and within this spectrum range, the insertion loss and crosstalk are less than 6.71 dB and -30 dB, respectively.The interest in the application of multimode interference (MMI) coupler in optoelectronic integrated devices has been increased dramatically [1][2][3] , due to the advantages of its compactness, relaxed fabrication tolerance, large optical bandwidth, polarization insensitivity and suitability for device integration. Therefore, the MMI-based Mach-Zehnder interferometer (MZI) EO switches show superior characteristics and relaxed manufacturing tolerance to the directional coupler (DC) switches. However, during the fabrication of EO devices, the synthesis of polymer material, the patterning of waveguide and the manufacture of electrode will unavoidably bring errors to the designed values of parameters [4][5][6] . These errors will lead to the changes of output power, insertion loss and crosstalk.In this letter a velocity-matched polymer-on-silicon MZI EO switch comprising two 3-dB MMI couplers is designed and optimized for enhancing the EO modulation efficiency and matching the impedance. The analysis on manufacture tolerance is carried out for designing an ideal switch, including the refractive index variation coming from the synthesis of material, the waveguide fabrication error and the electrode fabrication error arising from the processing of the device. Fig.1 shows the schematic diagram and cross-section in the EO active region of the designed polymer-on-silicon MZI EO switch. The device consists of two symmetric 3 dB MMI couplers with length L MMI and width W MMI as the power splitter and power combiner, respectively, a MZI EO region with length L EO , and a push-pull dual-driving electrode structure containing two upper operation electrodes with width W, gap G and thickness b 3 and a grounded electrode. The refractive index and amplitude bulk attenuation coefficient are n 1 = 1.643 and 1 = 2.0 dB/cm for the cross-linked core material AJ309 [7,8] , n 2 = 1.461 and 2 = 0.25 dB/cm for the upper/under