Optimal Dead-time Setting and Loss Analysis for GaN-based Voltage Source Converter

Williford, Paige; Jones, Edward A.; Yang, Zhe; Chen, Jianliang; Wang, Fred; Bala, Sandeep; Xu, Jianzhong

doi:10.1109/ecce.2018.8557768

Cited by 15 publications

(6 citation statements)

References 22 publications

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“…where I sw is the switched current. Being t zvs dependent on the switched current, an adaptive dead-time control strategy can be typically implemented, with the goal of minimizing/eliminating the dead-time loss [75]- [77]. Therefore P dt ≈ 0 will be considered here.…”

Section: Switching Lossmentioning

confidence: 99%

New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

2022

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in 1993, and the Ph.D. in Electrical Engineering from Politecnico di Torino, Italy, in 2002. He is a Full Professor of Power Electronics and Electrical Drives in the Energy Department "G. Ferraris" and Chairman of the Power Electronics Innovation Center (PEIC) at Politecnico di Torino, Italy. Dr. Bojoi published more than 200 papers covering electrical drives and power electronics for industrial applications, transportation electrification, power quality, and home appliances. He was involved in many research projects with industry for direct technology transfer aiming at obtaining new products. Dr. Bojoi is the co-recipient of 6 IEEE prize paper awards. Dr. Bojoi is a Co-Editor-In-Chief of the IEEE Transactions on Industrial Electronics.

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Section: Switching Lossmentioning

confidence: 99%

New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

2022

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“…3, the deadtime changes the resulted converter duty cycle. When we define the controller duty cycle d MCU (5) as the transistor T1 ontime T1 on , we can calculate the converter duty cycle according to (6).…”

Section: A Continuous Current Modementioning

confidence: 99%

“…The deadtime must be carefully adjusted for the converter equipped with GaN transistors to keep the high efficiency in a wide range of power [6].…”

Section: Introductionmentioning

confidence: 99%

Tracking Deadtime Algorithm for GaN DC/DC Converter

Skarolek

Lettl

2019

2019 International Conference on Applied Electronics (AE)

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The presented method automatically adjusts the deadtime of gallium nitride (GaN) transistors in half-bridge to increase the efficiency. This removes the need of manual measuring and setting the deadtime of the finished converter. The developed algorithm was tested and compared with the fixed deadtime case. The obtained results show that the developed algorithm is achieving higher and more stable efficiency compared to selected fixed deadtime.

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“…In other words, the delay between when one transistor is turned off and the other is turned on, which is called the dead-time, needs to be set precisely [7]. However, the optimum dead-time for GaN transistors changes with the converter output power and input DC-link voltage [8]. An in-depth investigation in [9] shows the need to modify both the rising and falling edges of the microcontroller (MCU) control signal with the variable dead-time.…”

Section: Introductionmentioning

confidence: 99%

Reverse Conduction Loss Minimization in GaN‑Based PMSM Drive

et al. 2020

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Gallium nitride (GaN) devices are becoming more popular in power semiconductor converters. Due to the absence of the freewheeling substrate diode, the reverse conduction region is used in GaN transistors to conduct the freewheeling current. However, the voltage drop across the device in the reverse conduction mode is relatively high, causing additional power losses. These losses can be optimized by adequately adjusting the dead-time issued by the microcontroller. The dead-time loss minimization strategies presented in the literature have the common disadvantage that either additional hardware or specific converter data are needed for their proper operation. Therefore, this paper’s motivation is to present a novel dead-time loss minimization method for GaN-based high-frequency switching converters for electric drives that does not impose additional requirements on the hardware design phase and converter data acquisition. The method is based on optimizing the current controllers’ output with a simple perturb-and-observe tracker. The experimental results show that the proposed approach can minimize the dead-time losses over the whole drive’s operating range at the cost of only a moderate increase in software complexity.

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Optimal Dead-time Setting and Loss Analysis for GaN-based Voltage Source Converter

Cited by 15 publications

References 22 publications

New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

Tracking Deadtime Algorithm for GaN DC/DC Converter

Reverse Conduction Loss Minimization in GaN‑Based PMSM Drive

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