Optimal bandgap variants of Cd1−xZnxTe for high-resolution X-ray and gamma-ray spectroscopy

Toney, J.; Schlesinger, T. E.; James, R. B.

doi:10.1016/s0168-9002(98)01575-7

Cited by 52 publications

(26 citation statements)

References 21 publications

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“…It was found theoretically that the optimal band gap about of 2.0 eV (x¼ 0.7 À 0.8) for Cd 1 À x Zn x Te crystals is more suitable for operation at room temperature of high-resolution X-ray and gamma-ray spectroscopy than Cd 0.9 Zn 0.1 Te [25].Therefore it is very important task to study Cd 1 À x Zn x Te thick films with large Zn concentration. Earlier, different properties of thin and thick films have been studied in Refs.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

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Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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“…2 demonstrates how the CMT crystals were mounted to a modified subminiature type A (SMA) connector, using copper contacts and a hardened silver paste. The crystal main dimensions were 1x3 mm, 2 with the length along X-ray propagation varying between 1.0, 1.5 and 2.3 mm. Gold contacts were deposited on the top and bottom surfaces to facilitate the Cu electrode contacts, separated by 1 mm.…”

Section: Detector Preparation and Experimental Setupmentioning

confidence: 99%

“…detectors (PCDs) are volume absorbers implemented for measurements of charge carriers generated by the detector transient absorption of ionizing radiation. Common materials for X-ray PCDs are diamond [1] and (Cd,Zn)Te (CZT) [2], with numerous configurations intended to address the balance tradeoffs, such as sensitivity, resolution, and spectral bandwidth. Recently much effort has been spent on making (Cd,Mn)Te (CMT) as a viable material for radiation detection, for it has many beneficial and inherent qualities [3], [4].…”

Section: Introductionmentioning

confidence: 99%

“…The E G of CZT increases 6 eV per atomic % (at.%), whereas in CMT it increases by 13 eV per at.%, resulting in lower Mn x levels needed for the desired E G . For example, when x = 0.27, the CMT E G = 1.9 eV, which has been declared as an optimal value for the best CMT PCD performance [2], [12]. CZT on the other hand, needs a concentration of Zn equal to 0.59 to achieve a similar E G .…”

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(Cd,Mn)Te detectors for characterization of X-ray emissions generated during laser-driven fusion experiments

Cross

Knauer

Mycielski

et al. 2010

Nuclear Instruments and Methods in Physics Research Section A:

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Abstract-We present our measurements of (Cd,Mn)Te photoconductive detectors (PCDs), fabricated for the goal of measuring both the temporal and spectral dependences of X-ray emissions generated from laser-illuminated targets during the inertial confinement fusion experiments. Our Cd 1-x Mn x Te (x = 0.05) single crystals, doped with V, were grown using a vertical Bridgman method and, subsequently, annealed in Cd for the highest resistivity (~10 10 Ωcm) and a good mobility-lifetime product (~10 -3 cm 2 /V). The 1-mm-and 2.3-mm-thick detectors were placed in the same housing as two 1-mm-thick diamond PCDs. All devices were pre-screened by a 7.6-mm-thick Be Xray filter with a frequency cutoff of 1 keV. The incident shots from the OMEGA laser were 1-ns-long square pulses with energies ranging from 2.3 kJ to 22.6 kJ, and the PCDs were biased with 5000 V/cm. The response amplitudes and rise times of our (Cd,Mn)Te PCDs were comparable with the diamond detector performance, while the decay times were 4 to 10 times longer and in the 2-5 ns range. We observed two X-ray emission events separated by 1.24 ns. The first was identified as caused by heating of the target and creating a hot corona, while the second one was from the resulting compressed core. For comparison purposes, our testing was performed using ~1 keV X-ray photons, optimal for the diamond PCD. According to the presented simulations, however, at X-ray energies >10 keV diamond absorption efficiency drops to <50%, whereas for (Cd,Mn)Te the drop occurs at ~100 keV with near perfect, 100% absorption, up to 50 keV.

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“…Owing to its unique magnetic and magnetooptic properties [1], Cd 1−x Mn x Te crystals can be used in many device applications [2] and offer several potential advantages over Cd 1−x Zn x Te as a material for room-temperature X-and gamma-ray detectors [3,4]. The band gap range 1.7 eV to 2.2 eV, required for substantiating an "ideal" radiation detector performance, can be realized with a relatively low (< 50%) amount of Mn compared with that of Zn in Cd 1−x Zn x Te (up to 70%) [4].…”

Section: Introductionmentioning

confidence: 99%

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

Yurtsenyuk¹,

Kosyachenko²,

Sklyarchuk³

et al. 2011

Acta Phys. Pol. A

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The electrical properties of single Cd 1−x Mn x Te (x = 0.07-0.39) crystals with a resistivity of ≈ 108 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.

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Optimal bandgap variants of Cd1−xZnxTe for high-resolution X-ray and gamma-ray spectroscopy

Cited by 52 publications

References 21 publications

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

(Cd,Mn)Te detectors for characterization of X-ray emissions generated during laser-driven fusion experiments

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

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