Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures

Abstract

Electronic phase separation has been used to realize exotic functionalities in complex oxides with external stimuli, such as magnetic field, electric field, current, light, strain, etc. Using the Nd 0.7 Sr 0.3 MnO 3 =0.7PbðMg 1=3 Nb 2=3 ÞO 3-0.3PbTiO 3 multiferroic heterostructure as a model system, we investigate the electric field and light cocontrol of phase separation in resistive switching. The electricfield-induced nonvolatile electroresistance response is achieved at room temperature using reversible ferroelastic domain switching, which can be robustly modified on illumination of light. Moreover, the electrically controlled ferroelastic strain can effectively enhance the visible-light-induced photoresistance effect. These findings demonstrate that the electric-field-and light-induced effects strongly correlate with each other and are essentially driven by electronic phase separation. Our work opens a gate to design electrically tunable multifunctional storage devices based on multiferroic heterostructures by adding light as an extra control parameter.

Coupled straintronic–optoelectronic effect in Mott oxide films

“…A similar light tuning of electroresistance was also observed in SrRuO 3 /PMN-PT and Nd 0.7 Sr 0.3 MnO 3 /PMN-PT systems. 26,28 All these data rigorously demonstrate the strong coupling of the straintronic effect and the optoelectronic effect, essentially originating from the mutual interaction between lattice and charge degrees of freedom in LVO films.…”

“…The photo-generated relative variation in ER reaches a large value of 79%, which is much superior to those of SrRuO 3 /PMN-PT (8.2%) and Nd 0.7 Sr 0.3 MnO 3 /PMN-PT (23.8%) systems. 26,28 Such a prominent optically tunable electroresistance is believed to be unprecedented and again verifies the robust coupling effect of straintronics and optoelectronics in LVO/PMN-PT structures.…”

Electric-Field-Tunable Transport and Photo-Resistance Properties in LaMnO3−x/PMN-PT Heterostructures

“…This two-stage polarization-reorientation process leads to a 180 • polarization switching, i.e., the out-ofplain polarization vector points along [001] direction (denoted by the Pr − state). Moreover, the R-E curve shows an approximate butterfly-like shape, resembling the butterfly-like strain curves of the PMN-PT [12]. This feature further confirms the strain-induced nature of the resistance evolution, which is different from the square resistance hysteresis loops observed in TiO 2−δ /PMN-PT and La 1−x Ba x MnO 3 /PbZr x Ti 1−x O 3 , where the ferroelectricfield effect plays a key role in determining the resistance [13,26].…”

“…It is valuable for designing data-storage, sensing, microwave and magnetoelectric devices with ultralow energy consumption [7,8]. (1 − x)Pb(Mg 1/3 Nb 2/3 )O 3−x PbTiO 3 single crystal exhibits excellent ferroelectric (2Pr~60 µC/cm 2 ) and piezoelectric activities (d 33 > 2000 pC/N, k 33 ~0.9) and has been widely used to fabricate ferroelectric heterostructures [9][10][11][12][13][14][15][16][17]. In these heterostructures, the lattice strain, magnetization, resistance, luminescence and magnetoresistance of the films have been modulated by the electric field, leading to the various applications.…”

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

“…Perovskite-type binary and ternary ferroelectric (FE) single crystals of (1 -x)Pb(Mg [17][18][19][20] as well as large ferroelectric-domain-switching-induced lattice strains, which can be reversibly, continuously, and quantitatively tuned by simply applying dc or ac electric fields to the FE crystals along the thickness direction. As of now, finely polished (001)-, (011)-, and (111)-cut PMN-xPT and PIN-xPMN-yPT single crystals have been used as substrates to grow a variety of thin films, such as R 1-x A x MnO 3 (R = La, Pr, A = Ca, Sr, Ba) [21][22][23][24][25][26][27][28][29], Co [30,31], BiFeO 3 [32], YBa 2 Cu 3 O 7 [33,34], BaTiO 3 :Yb/Er [35,36], AFe 2 O 4 (A = Co, Ni) [37,38], Fe 3 O 4 [39,40], and Bi 0.94 Pb 0.06 CuSeO [41], so that the lattice strain and the related properties of these films could be in situ modified. Virtually, using this unique method, the intrinsic lattice strain effects of any films grown on FE substrates can be studied without introducing extrinsic effects caused by the variation in oxygen content, thickness of the dead layer, defects, crystallinity, disorder, and so on.…”