Optically-switched Dual-diode Electroabsorption Modulator

Sabnis, V.A.; Demir, Hilmi Volkan; Fidaner, Onur; Harris, James S.; Miller, David A. B.; Zheng, Jiangtao; Li, Nelson; Wu, Tsu‐Yang; Houng, Y.M.

doi:10.1364/ipr.2003.imb3

Cited by 9 publications

(9 citation statements)

References 7 publications

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“…[24] Table II lists the epitaxial layer structure used for the PD. The structure is a simple diode comprising a 1.25 m thick InGaAs absorber region (layer 5) that strongly absorbs over the 1.3-1.6-m telecommunication wavelength band.…”

Section: B Pd Epitaxial Layer Designmentioning

confidence: 99%

“…The switch operation requires intimate integration and high-speed interconnection of the EAM and the PD. As a consequence of our SAR technique, the minimum PD-EAM separation is 50 m [24]. The overall thickness of the PD structure is chosen such that the uppermost layers of the EAM and the PD are approximately level, enabling metallization to interconnect the -contacts of the two devices.…”

Section: Realization Of the Switchmentioning

confidence: 99%

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Multifunctional integrated photonic switches

Demir

Sabnis²,

Fidaner³

et al. 2005

IEEE J. Select. Topics Quantum Electron.

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Abstract-Traditional optical-electronic-optical (o-e-o) conversion in today's optical networks requires cascading separately packaged electronic and optoelectronic chips and propagating high-speed electrical signals through and between these discrete modules. This increases the packaging and component costs, size, power consumption, and heat dissipation. As a remedy, we introduce a novel, chip-scale photonic switching architecture that operates by confining high-speed electrical signals in a compact optoelectronic chip and provides multiple network functions on such a single chip. This new technology features low optical and electrical power consumption, small installation space, high-speed operation, two-dimensional scalability, and remote electrical configurability.In this paper, we present both theoretical and experimental discussion of our monolithically integrated photonic switches that incorporate quantum-well waveguide modulators directly driven by on-chip surface-illuminated photodetectors. These switches can be conveniently arrayed two-dimensionally on a single chip to realize a number of network functions. Of those, we have experimentally demonstrated arbitrary wavelength conversion across 45 nm and dual-wavelength broadcasting over 20 nm, both spanning the telecommunication center band (1530-1565 nm) at switching speeds up to 2.5 Gb/s. Our theoretical calculations predict the capability of achieving optical switching at rates in excess of 10 Gb/s using milliwatt-level optical and electrical switching powers.

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Section: B Pd Epitaxial Layer Designmentioning

confidence: 99%

Section: Realization Of the Switchmentioning

confidence: 99%

Multifunctional integrated photonic switches

Demir

Sabnis²,

Fidaner³

et al. 2005

IEEE J. Select. Topics Quantum Electron.

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“…2) on an InP substrate [5]. The photodiodes and modulators of the switches are monolithically integrated into a compact circuit area, using a selective area regrowth technique [6]. The function of these switches is to transfer optical signals from the input data streams, incident on their respective photodiodes, onto the continuous-wave beams coupled into their modulator waveguides, provided that the photodiodes and modulators are properly reverse-biased.…”

Section: Introductionmentioning

confidence: 99%

Scalable Wavelength-Converting Crossbar Switches

Demir

Sabnis²,

Zheng

et al. 2004

IEEE Photon. Technol. Lett.

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Abstract-We report scalable low-power wavelength-converting crossbar switches that monolithically integrate two-dimensional compact arrays of surface-normal photodiodes with quantum-well waveguide modulators. We demonstrate proof-of-concept, electrically reconfigurable 2 2 crossbars that perform unconstrained wavelength conversion across 35 nm in the -band (1530-1565 nm), using only 4.3-mW absorbed input optical power, and with 10-dB extinction ratio at 1.25 Gb/s. Such wavelength-converting crossbars provide complete flexibility to selectively convert any of the input wavelengths to any of the output wavelengths at high data bit rates in telecommunication, with the input and output wavelengths being arbitrarily chosen within the -band.

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“…The detailed epitaxial layer designs are given both for the modulator and the photodiode in Table 1. To monolithically integrate the modulator with the photodiode, we made use of a new selective area regrowth technique [11], and a novel, self-aligning polymer planarization and passivation method [12]. Figure 4 shows cross-sectional SEM pictures across the integrated modulator and photodiode.…”

Section: Introductionmentioning

confidence: 99%

Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting

Demir¹,

Sabnis²,

Fidaner³

et al. 2004

Opt. Express

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We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.

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Optically-switched Dual-diode Electroabsorption Modulator

Cited by 9 publications

References 7 publications

Multifunctional integrated photonic switches

Multifunctional integrated photonic switches

Scalable Wavelength-Converting Crossbar Switches

Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting

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