Optically Rewritable Memory in a Graphene–Ferroelectric-Photovoltaic Heterostructure

Kundys, Dmytro; Cascales, A.; Makhort, A. S.; Majjad, Hicham; Chevrier, F.; Doudin, B.; Fedrizzi, Alessandro; Kundys, B.

doi:10.1103/physrevapplied.13.064034

Cited by 22 publications

(22 citation statements)

References 74 publications

(83 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our findings therefore open a new avenue to photonic control of optical devices based on photo-ferroelectric crystals for all-optical modulators, memories and variety of optical logics, possibly extendable even to quantum effects [49] and 2D structures. [50]…”

Section: Discussionmentioning

confidence: 99%

Photovoltaic‐Ferroelectric Materials for the Realization of All‐Optical Devices

Makhort

Gumeniuk

Dayen

et al. 2021

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

conditions remains largely hypothetical, although finding efficient optical transistors could revolutionize conventional computers. Recent reports exploited various environments and circumstances focusing on quantum effects in atomic, [1][2][3][4][5][6][7][8] molecular, [9] quantum dots, [10][11][12] polaritons [13,14] or graphene [15] -based systems, including electromagnetically induced transparency effects. [16,17] To be technologically compatible the all-optical gating of the light transmission must operate at room temperature with low light power and demonstrate logic functionality in solid state devices. There are also important application criteria to meet such as inputoutput insulation, cascadability, logic-level restoration, etc. [18] Thus, new simple and inexpensive device paradigms demonstrating efficient optical gating under ambient conditions are highly required. Because the mechanism by which a material interacts with light depends on its microscopic building blocks, an optical transistor can be realized based on a system that changes its intrinsic environment under illumination. Here we demonstrate the realization of this hypothesis in a cavity-free approach that does not need to operate coherently. The demonstration is realized using a ferro electric (FE) crystal, possessing also photovoltaic (PV) properties. The photoferroelectric compounds are remarkable materials having potential for an increased multi-functionality. [19][20][21] The photovoltaic properties in some FE compounds [22][23][24][25] offer an efficient interplay between light induced photo-carrier generation and non-zero intrinsic electric field in the sample. Such interplay can lead to nonlinear optical response required for changing the light propagation. Herein we report that a light transmission through a photovoltaic-ferroelectric crystal can be modulated optically via the amount of charges generated and distributed during the bulk photovoltaic effect (BPVE). [22][23][24]26] Results and Discussions Optical GatingThe appropriate crystal of Pb[(Mg 1/3 Nb 2/3 ) 0.70 Ti 0.30 ]O 3 was selected from the well-know family of the PMN-xPT complex optimized for piezoelectricity. [27,28] These compounds exhibit a rich phase diagram [29] and exceptional optical properties reaching ∼70% transparency across a broad spectral Following how the electrical transistor revolutionized the field of electronics, the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as an optical transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter result...

show abstract

Section: Discussionmentioning

confidence: 99%

Photovoltaic‐Ferroelectric Materials for the Realization of All‐Optical Devices

Makhort

Gumeniuk

Dayen

et al. 2021

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, it has been shown that the population of polar domains with different orientations and concomitant domain walls, in ferroelectric multidomain single crystals (BaTiO 3 , BTO), can be modulated by suitable coherent illumination 28 , 29 or ultrafast light pulses 30 . Polarization switching via light absorption at semiconducting electrodes (for instance, bidimensional MoS 2 ) 31 , 32 or subsidiary devices 33 , 34 has been reported, and it has been used to control device resistance by light and electric field in a three terminal ferroelectric field-effect device 35 , 36 . Exploitation of polarization reversal by light absorption within the ferroelectric remains rather unexplored 37 , 38 .…”

Section: Introductionmentioning

confidence: 99%

Non-volatile optical switch of resistance in photoferroelectric tunnel junctions

et al. 2021

View full text Add to dashboard Cite

In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO3 films and their photovoltaic response at visible light, the polarization of suitably written domains can be reversed under illumination. We exploit this effect to trigger and measure the associate change of resistance in tunnel devices. We show that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 103%, and a robust electric and optic cycling of the device can be obtained mimicking the operation of a memory device under dual control of light and electric fields.

show abstract

“…One of the more technologically promising concepts involves optoelectronics employing domain walls, that is, light control of walls. [ 120–126 ] While initial demonstrations of wall manipulation with the light of various wavelengths have been brought forward, more detailed prototype device demonstrations remain to be shown. Closely related are high‐frequency electronic applications with domain walls in the Giga‐ and Tera‐Hertz range of the electromagnetic spectrum.…”

Section: Discussionmentioning

confidence: 99%

“…[ 46 ] Exploiting a coupling between the polarization and strain gradients or stress, [ 110,111 ] the localized mechanical stresses [ 76,112 ] can be used to effect polarization reversal and inject domain walls [ 46,113 ] or morphotropic phase boundaries, [ 114–117 ] although the approach may not be very practical for devices. Other alternative domain wall injection and control mechanisms that have been tried but are yet to be further developed include the imposition of macroscopic strain through bending, [ 118,119 ] optical impulses, [ 120–126 ] and magnetic and electric coupling. [ 127–132 ]…”

Section: State‐of‐the‐art Knowledgementioning

confidence: 99%

Roadmap for Ferroelectric Domain Wall Nanoelectronics

Sharma

Moïse

Colombo

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed. These nanoscale features currently are being actively explored for the development of agile, low‐energy electronics for applications in memory, logic, and brain‐inspired neuromorphic computing. In this article, the authors review the state of the art, the latest developments, and outline key device and material challenges, emerging opportunities, and new directions for the accelerated engineering and commercialization of domain wall technology.

show abstract

Optically Rewritable Memory in a Graphene–Ferroelectric-Photovoltaic Heterostructure

Cited by 22 publications

References 74 publications

Photovoltaic‐Ferroelectric Materials for the Realization of All‐Optical Devices

Photovoltaic‐Ferroelectric Materials for the Realization of All‐Optical Devices

Non-volatile optical switch of resistance in photoferroelectric tunnel junctions

Roadmap for Ferroelectric Domain Wall Nanoelectronics

Contact Info

Product

Resources

About