Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow—green spectral region

Луценко, Е. В.; Voinilovich, A. G.; Rzheutskii, N. V.; Pavlovskii, V. N.; Yablonskii, G. P.; Sorokin, Sergey; Gronin, S. V.; Sedova, I. V.; Kop’ev, P. S.; Ivanov, S. V.; Alanzi, M; Hamidalddin, A.; Alyamani, Ahmed Y.

doi:10.1070/qe2013v043n05abeh015164

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…. The output power of the green laser began to increase when InGaN LD power exceeded ∼0.5 W. At the maximum pump power of 9.8 W, the output power reached the value of 1.5 W which is an order of magnitude higher than previously reported value for microchip converter . The maximal ratio of the green laser emission power to the violet emission power (conversion efficiency) attained the lower estimate of 15.3% which is three times higher than our previous result .…”

Section: Resultscontrasting

confidence: 68%

“…The output power over 150 mW and quantum efficiency up to 25% at wavelength of 543 nm was achieved in the violet–green laser converter using bulky lens focusing optical system . Recently, a microchip configuration has been developed for the laser converters by using a microlens focusing system, however, the conversion efficiency was only ∼4.5% . This paper presents high efficiency microchip laser converter fabricated in line with on the basis of the novel II–VI laser heterostructure comprising an active region with three electronically coupled (Zn)CdSe QD sheets in a single ZnSe QW and grown in optimized MBE regime.…”

Section: Introductionmentioning

confidence: 99%

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Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

Vainilovich

Луценко

Pavlovskii

et al. 2016

Phys. Status Solidi B

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A high-efficiency microchip violet-green laser converter based on a molecular-beam epitaxy grown green-emitting (Zn)CdSe quantum dot (QD) II-VI laser heterostructure, optically pumped by emission of a cheap violet InGaN laser diode (LD) was demonstrated. The active region of the II-VI laser heterostructure consisted of three electronically coupled (Zn)CdSe QD sheets in a single ZnSe quantum well (QW) placed asymmetrically inside a graded-index ZnMgSSe/ZnSe superlattice optical waveguide. The cavity length of the cleavedfacet II-VI laser was 130 mm which is a nearly optimal value for minimizing the excitation power. InGaN LD radiation was focused into a narrow stripe on the surface of the II-VI laser by a microlens optical system. The converter showed laser emission at 541 nm with threshold excitation power of $0.5 W. The maximal output pulse power and conversion efficiency of 1.5 W and $15%, respectively, were achieved. The device was mounted in a standard TO-18 LD package.Photograph of the operating violet-green microchip laser converter.

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Section: Resultscontrasting

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

Vainilovich

Луценко

Pavlovskii

et al. 2016

Phys. Status Solidi B

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“…Quantum-sized ZnCdSe/ZnSe heterostructures are used to fabricate low-threshold green and yellow lasers with optical pumping by InGaN lasers [1]. Random lasing in the UV region at a high pulsed optical excitation level was fi rst produced and described in disordered ZnO microstructures [2,3].…”

Section: Introductionmentioning

confidence: 99%

Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels

et al. 2015

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Photoluminescence (PL) of ZnSe wide-bandgap semiconductor micropowder was studied at a high optical excitation level by pulsed nanosecond N 2 -laser emission. A new emission band that appeared on the long-wavelength edge of the PL spectrum at 40-75 meV from the electron-hole plasma (EHP) band depending on the optical excitation level showed that plasmons could participate in recombination processes in the EHP. Random lasing at 475 nm from submicron-sized crystallites in ZnSe powder was produced by the third harmonic of a YAG:Nd 3+ laser with an exciting-radiation threshold intensity of 750 kW/cm 2 . The lasing manifested as a sharp increase of integrated emission intensity, a narrowing of the spectrum, and the appearance in it of localized and extended mode structure. Random lasing was due to feedback of amplifi ed radiation in closely packed active scattering microcrystallites. Introduction.A II B VI compounds are direct-band semiconductors and are promising for fabricating optically pumped lasers in the far-UV, visible, and mid-IR spectral regions. Quantum-sized ZnCdSe/ZnSe heterostructures are used to fabricate low-threshold green and yellow lasers with optical pumping by InGaN lasers [1]. Random lasing in the UV region at a high pulsed optical excitation level was fi rst produced and described in disordered ZnO microstructures [2,3]. Signifi cant attention is paid to random lasing in the mid-IR region in micropowders of the semiconductors ZnS, CdS, ZnSe, and CdSe activated by transition metals (Cr 2+ , Fe 3+ ) [4]. The mechanism of random lasing in nano-and microstructures (powders, thin fi lms, nanowires, etc.) of semiconductors is based on the creation of positive feedback for amplifi ed radiation with multiple scattering. As a result, closed amplifi cation loops are formed at a suffi cient level of optical excitation between the active particles of the scattering medium. Such lasers do not require mirrored cavities, which lessens signifi cantly their cost. The characteristics of random lasing are suitable for important applications of this type of lasers such as, e.g., visualization of television images, information processing and transfer, security of documents and money, labeling of materials, medical biosensors, security cameras, and illumination technologies (because microparticles of random lasers can be deposited on surfaces of any shape) [5,6]. The study of random lasing can explain processes in galactic masers, the functioning of which is based on the same feedback mechanism. Moreover, the investigation of various nano-and micropowders of media as random lasers can be used to assess preliminarily their effi ciency as active laser media.Despite numerous data on random lasing in powders of many A II B VI semiconductors, it was produced earlier only in specially undoped ZnSe micropowder [7]. The mechanisms of recombination processes in epitaxial layers and micropowders of ZnSe at high excitation levels remain obscure and determine the appearance of a new emission band on the low-energy side of the mai...

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“…In contrast to that, optically and electron‐beam pumped lasers have no such disadvantage as they do not use p‐type doping at all. We have demonstrated recently the microchip laser converters based on II–VI heterostructure with two tunnel‐coupled CdSe quantum dot (QD) layers emitting in the green–yellow range of visible spectrum . This article reports on studies of internal laser characteristics of optically pumped II–VI laser heterostructures with different design of an active region, in particular, with CdSe QDs embedded in a ZnCdSe quantum well (QW), emitting in “true” yellow and even orange ranges.…”

Section: Introductionmentioning

confidence: 99%

Internal laser characteristics of optically pumped yellow-orange lasers

Alyamani

Луценко²,

Gronin

et al. 2016

Phys. Status Solidi B

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Internal laser characteristics of two heterostructures with an active region based on CdSe quantum dots (QDs) embedded in a complex (2-3) nm ZnCdSe/ZnSe quantum well (QW) were determined by measuring the differential laser efficiency and the laser threshold of a set of samples with different cavity lengths. Due to changing the CdSe QD nominal thickness and the ZnCdSe QW composition, the lasing wavelength for the two structures was tuned over wide ranges: green-yellow (556-573 nm) and yellow-orange (583-593 nm), depending on the cavity length. Maximum optical characteristic gain and internal quantum efficiency were measured as high as ГG 0 ¼ 54 cm À1 , h i ¼ 83% (for green-yellow structure) and ГG 0 ¼ 81 cm À1 , h i ¼ 72% (for yellow-orange one), while the transparency threshold I T was lower for the former structure: 0.6 vs. 1.2 kW cm À2 , with the internal optical loss of a i $ 4.6 cm À1 being equal for both structures. The possible reasons of the high value of the characteristic gain as well as the longwavelength shift of the QDs emission are discussed.

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Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow—green spectral region

Cited by 12 publications

References 7 publications

Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels

Internal laser characteristics of optically pumped yellow-orange lasers

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