The electron-nuclear interaction in optically-pumped NMR of semiconductors manifests itself through changes in spectral features (resonance shifts, line widths, signal amplitudes) and through the magnitude of the nuclear spin polarization. We show that these spectral features can provide a measure of the parameters that govern the optical pumping process: electron-nuclear cross relaxation rate, Bohr radius and fractional occupancy of the optically relevant defect (ORD), and electron polarization at the ORD. Applying a model of the spatial and temporal evolution of the nuclear spins under optical pumping to 31 P in semi-insulating InP we find an ORD Bohr radius of 6 nm, independent of the electron polarization used to fit the data, confirming the ORD is a shallow donor. For an electron polarization of -0.15, the ORD fractional occupancy is 0.02, leading to an electron-nuclear cross relaxation time of 0.20 s and a hyperfine frequency shift of 8.1 kHz for superbandgap irradiation. Allowing the electron polarization to vary in the model constrained to the hyperfine shift data, we find the fractional occupancy and electron-nuclear cross relaxation rate to be approximately inversely proportional to the electron polarization. From the long time evolution of the nuclear polarization we calculate an ORD density of 5 × 10 15 cm −3 .