Optically pumped InGaN/GaN lasers with wet-etched facets

Stocker, D. A.; Schubert, E. F.; Redwing, Joan M.

doi:10.1063/1.1333689

Cited by 12 publications

(8 citation statements)

References 17 publications

(18 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[11][12][13][14][15] Of these methods, cleaving has produced the smoothest facet surfaces with root-mean-square (RMS) roughness values on the order of 1 nm for GaN-based laser diodes (LDs) grown on SiC. 3 However, etched facets have a number of advantages, including applicability to laser epilayers grown on substrates such as sapphire that do not have common cleavage planes, and the potential for on-wafer laser testing.…”

Section: Introductionmentioning

confidence: 99%

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Miller

Crawford

Allerman

et al. 2009

Journal of Elec Materi

View full text Add to dashboard Cite

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al x Ga 1Àx N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greater than 95% of that of a perfectly smooth and vertical facet.

show abstract

Section: Introductionmentioning

confidence: 99%

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Miller

Crawford

Allerman

et al. 2009

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…Stocker et al reported a selective wet chemical etching method to form smooth

{10 \overset{1}{true} 0}

plane ( m ‐plane) of GaN, and the rms roughness was estimated on the order of 1 nm . GaN laser diodes with wet‐etched facets were reported to increase the facet reflectivity and reduce the threshold power/current density . And wet etching in alkaline solution was adopted to reduce scattering loss of AlN waveguides .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of GaN‐based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching

Luo

Xiong

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

GaN-based ridge waveguides with very smooth and vertical sidewalls are fabricated by combined inductively coupled plasma (ICP) etching and wet chemical etching. The height of GaN waveguide is precisely controlled by ICP dry etching, while smooth and vertical sidewalls are realized by wet chemical etching. Compared with waveguides with rough sidewalls just after ICP etching, the propagation loss of waveguides with wet-etched smooth sidewalls was reduced by about 2 dB mm À1 at 1.55 mm. Propagation loss can be further reduced by improving the quality of GaN epitaxial layers.

show abstract

“…Therefore, if the FIB method is to be used for fabricating microdisk mesa structures, the tremendous sidewall damages caused by energetic Ga þ ion bombardment must be taken into account. As all dry-etch methods will damage the sidewalls with different extents, there are also reports of using chemical wet-etching methods such as highly anisotropic photoenhanced wet-etching [97,98] or crystallographic wetetching [99,100] to fabricate GaN slab with low-damage smooth sidewalls. However, control of microdisk geometry using wet-etching methods remains to be challenging.…”

Section: Feature Articlementioning

confidence: 98%

Advances in III‐nitride semiconductor microdisk lasers

Zhang

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

This paper reviews the recent progress in the design and fabrication strategies of III-nitride semiconductor microdisk lasers on sapphire or Si substrates. Involving more accurate lithography methods in the fabrication boosts quality factors (Q-factors) due to the improved optical confinement of whispering-gallery modes (WGMs) at the rim of the microdisks with smooth sidewalls and perfect circularity. Quantum dots (QDs) as gain medium within the microdisks are investigated and promising for the demonstration of microlasers with super-high Q-factors and ultra-low thresholds. And these QD-cavity systems are also facilitating the research of cavity quantum electrodynamics (QED) in the strong coupling regime and cavity-enhanced single photon emission (SPE) for quantum computing. In this paper, we also report successful fabrication of transferred GaN free-standing microdisks with InGaN quantum wells (QWs) on conductive substrates, which achieves a significant step forward to realize electrically pumped high-quality microdisk lasers on target substrates. Strategies of applying flexible transparent electrodes such as graphene and metallic nanowires are potential effective solutions for realizing current-injection of nitride-based microdisks.ß 2015 WILEYÀVCH Verlag GmbH & Co. KGaA, Weinheim 1 Introduction Over past few decades, group IIInitride compound semiconductors have been extensively studied and have emerged as indispensable materials for a wide range of optoelectronic devices. With a wide and direct energy bandgap, emissions from III-nitride semiconductors can cover the wavelength range from deep ultraviolet to the near-infrared, making them ideal candidates for incoherent and coherent light sources [1][2][3][4]. Moreover, as epitaxial growth techniques of III-nitride materials become mature, high quality quantum structures such as quantum wells (QWs) and quantum dots (QDs) can be readily achieved, greatly improving the emission efficiency via quantum confinement of the carriers within a small active region so that the possibility of radiative recombination increases, serving as gain medium for highly efficient light emitters [5][6][7]. In addition, the high binding energies of excitons in these wide bandgap materials motivate the research on photon-exciton (or polariton) dynamics and its coherent state polariton lasing in microcavities [8][9][10][11]. In fact, the research of nitride-based microcavity lasers has attracted much attention in past decades for both physical insight of lasing mechanisms in both the weak and strong coupling regimes and their widespread applications [12]. Until now,

show abstract

Optically pumped InGaN/GaN lasers with wet-etched facets

Cited by 12 publications

References 17 publications

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Fabrication of GaN‐based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching

Advances in III‐nitride semiconductor microdisk lasers

Contact Info

Product

Resources

About