Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector

Lee, Seung Min; Gong, Su‐Hyun; Kang, Jin Ho; ElKabbash, Mohamed; Ryu, Sang Wan; Cho, Yong-Hoon

doi:10.1364/oe.23.011023

Cited by 37 publications

(21 citation statements)

References 25 publications

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“…3.10 (b)], a clear non-linear lasing L-L plot characteristic was observed with a threshold pump density of ~5 kW/cm 2 with no apparent thermal roll-over. This threshold power density is similar to the optically pumped nanoporous VCSEL reported in [129] but still larger than the nanoporous VCSEL reported in [121], due to the incorrect epilayer thicknesses and absorbing dielectric materials. The emission linewidth is also plotted in Fig.…”

Section: Optical Characterization Of Nonpolar Nanoporous Vcselssupporting

confidence: 73%

“…(Inset) Thermal resistance vs. cavity length for an 8 µm diameter aperture design. 34 [129], and (b) Yale university [121]. Plots reprinted with permission.…”

Section: List Of Figuresmentioning

confidence: 99%

“…1. L-L plot and the spectrum showing the linewidth of an optically pumped c-plane VCSEL using nanoporous DBRs from (a) Chonnam National University[129], and (b) Yale university[121].Plots reprinted with permission.…”

mentioning

confidence: 99%

“…3.Optically pumped hybrid-cavity nonpolar VCSELOptical pumping is commonly used to obtain vital information about the cavity quality and test the emission characteristics before the fabrication of the actual electrical device[121,129,[153][154][155][156][157]. Out of these optically pumped demonstrations, only two research groups have successfully shown lasing characteristics from a VCSEL cavity using nanoporous DBRs grown on c-plane GaN[121,129].…”

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confidence: 99%

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Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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I am grateful to many people for making this work possible. First and foremost, I would like to thank my advisor Prof. Daniel Feezell for his dedicated guidance and support. Early on in my degree, I remember him mentioning that VCSEL projects are always of high risk and high reward. For the longest time, I doubted myself on whether I would be able to fulfill all the project requirements. But, Prof. Feezell believed in my ability and urged me to push forward which ultimately lead to groundbreaking results from my VCSEL project. Not only did I learn a ton from his vast knowledge on IIInitride materials and devices, his constructive criticisms greatly improved the quality of my work and allowed me to grow as a researcher. Next, I am thankful to my committee members and collaborators, Prof. Ganesh Balakrishnan, Prof. Sang Han, and Dr. Ting Luk for their time and suggestions. Their valuable insight on optical, electrical, and mechanical properties of semiconductors helped me tremendously in understanding the material characteristics and device performance of my VCSELs. I cannot express the immense gratitude I feel for my fellow group members, both past and present. All of whom have helped me towards the completion of my PhD in some way or another. Many thanks to Ashwin, Morteza, Mohsen, and Mike for introducing me to MOCVD and for taking care of my growths when I was busy doing something else. Discussions regarding fabrication with Andrew, Mahmoud, Rhett, Kenny, Farnood, and Abdel have always helped me in developing processes very v quickly and reliably. I am also grateful to Serdal, Arman, and Isaac for assisting me in various material and device related characterizations. Many of the accomplishments mentioned in this thesis could not have been possible without the support of the technical and/or administrative staff. As such, I am forever indebted to the ECE, CHTM, and CINT staff members for putting up with my numerous requests and questions throughout the years. Beyond the appreciation of the technical side of things, I would like to thank all my friends from back home and the ones I made during the course of my study. They were always there to lend a helping hand or to simply distract me from work whenever graduate student life became too overwhelming. Furthermore, I must also acknowledge the Bangladeshi community here at UNM for making Albuquerque feel like home, even though my real home is halfway around the world. Looking back, I will forever cherish these memories. Last, but certainly not least, I would like to thank my parents, my older sister, and my younger brother. I would not be where I am at today without their unconditional love and encouragement. They have sacrificed a lot so that I can pursue a career of my choice, even if it meant me being away from home for an extended period time. I only hope that the work I performed in this thesis is substantial enough to repay them and make them proud. vi

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Section: Optical Characterization Of Nonpolar Nanoporous Vcselssupporting

confidence: 73%

“…(Inset) Thermal resistance vs. cavity length for an 8 µm diameter aperture design. 34 [129], and (b) Yale university [121]. Plots reprinted with permission.…”

Section: List Of Figuresmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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“…These properties combined present a unique opportunity to build GaN VCSELs. High-reflectance NP GaN DBR mirrors [117][118][119][120][121][122], optically pumped VCSELs [117,118], and resonant-cavity LEDs (RC-LEDs) [123,124] have been demonstrated by many groups in recently years. The ultimate viability of NP GaN DBRs will be determined by their long-term stability against thermal and electrical stresses.…”

Section: Nanoporous Gan/gan Dbrsmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes

Yang

Liu

et al. 2020

Advanced Optical Materials

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The implementation of blue‐light photodiodes based on InGaN in emerging technologies, such as free‐space visible light communication (VLC), requires transformative approaches toward enhanced performance, miniaturization, and integration beyond current Si‐based technologies. This work reports on the design and realization of high‐performance InGaN‐based resonant cavity photodiodes with high‐reflectivity lateral porous GaN distributed Bragg reflectors. The well‐controlled porosification of GaN on the 2‐inch wafers enables design and fabrication of optical components, unlocking the potential of nitride semiconductors for several applications. These resonant‐cavity‐enhanced photodiodes, which have a 12 nm‐thick optically active region, exhibit a high responsivity (≈0.1 A W−1) to blue‐light even without any externally applied voltage. Furthermore, the device can operate as both an emitter and a detector of visible light at well‐defined wavelengths with spectral overlap between the electroluminescence emission and photocurrent responsivity, meeting the requirement of wavelength selectivity, thermal stability, and low‐power consumption for VLC, with potential for integration of different functionalities, that is, light emission and detection, on a single chip without additional light filters.

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Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector

Cited by 37 publications

References 25 publications

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes

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