Optically detected nuclear magnetic resonance in semiconductor quantum wells

Flinn, G.P.; Harley, R. T.; Snelling, M. J.; Tropper, A.C.; Kerr, T. M.

doi:10.1016/0022-2313(90)90150-a

Cited by 22 publications

(10 citation statements)

References 5 publications

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“…Measurements in GaAs bulk [50] and in single quantum wells [51,52] have shown that there are essentially two ways of polarizing the nuclear spins. (i) directly via the Fermi contact Hamiltonian.…”

Section: Iii3 Measurement Of the Build-up Time Of The Nuclear Polariz...mentioning

confidence: 99%

Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy

et al. 2008

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We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting (Overhauser shift). We show that the created nuclear polarization is bistable and present a direct measurement of the build-up time of the nuclear polarization in a single GaAs dot in the order of one second.

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Section: Iii3 Measurement Of the Build-up Time Of The Nuclear Polariz...mentioning

confidence: 99%

Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy

et al. 2008

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“…At resonance, the corresponding nuclear spins start to rotate and acquire an angle with the electron spins, resulting in precession of electron spins along the reoriented nuclear field. 22 As a result, the component of electron spins along the external magnetic field is reduced, leading to reduced voltages. We observed such NMR signals both in NLSV and 3T configurations.…”

Section: à3mentioning

confidence: 99%

Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode

Shiogai

Ciorga

Utz

et al. 2012

Applied Physics Letters

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“…55 The larger value of N for the dots in these experiments will also increase the build-up time T e . 62 and in single quantum wells 63,64 have shown that there are essentially two ways of polarizing the nuclear spins. (i) directly via the Fermi contact Hamiltonian.…”

Section: Measurement Of the Build-up Time Of The Nuclear Polarizationmentioning

confidence: 99%

Carrier and nuclear spin pumping in strain free GaAs/AlGaAs quantum dots grown by droplet epitaxy

et al. 2011

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Optical and spin properties of individual GaAs droplet dots in AlGaAs barriers are studied in photoluminescence experiments at 4K. First we report strong mixing of heavy hole-light hole states. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k·p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot. Second we report optical orientation experiments. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence. Optical injection of spin polarized electrons into a GaAs dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting (Overhauser shift). We show that the created nuclear polarization is bistable and present a direct measurement of the build-up time of the nuclear polarization in a single GaAs dot in the order of one second.

show abstract

Optically detected nuclear magnetic resonance in semiconductor quantum wells

Cited by 22 publications

References 5 publications

Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy

Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy

Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode

Carrier and nuclear spin pumping in strain free GaAs/AlGaAs quantum dots grown by droplet epitaxy

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