Optically detected measurement of the ground-state population of an ensemble of neutral donors in GaAs

Allen, Dan; Sherwin, Mark S.; Stanley, C.R.

doi:10.1103/physrevb.72.035302

Cited by 16 publications

(14 citation statements)

References 22 publications

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“…The D 0 X resonances, as well as those associated with the ionized donor-bound exciton (D + X), acceptor-bound exciton (A 0 X), and free excitons (X), are readily identified by comparison with previous experimental results. 2,3 Although only three D 0 X emission resonances are individually resolved in the data shown, a fourth is known to overlap with the lowest energy peak. We label these peaks from lowest to highest energy with the notation L = 0, 1, 2, and 3, in accordance with Ref.…”

Section: Samples and Experimental Setupmentioning

confidence: 95%

“…We label these peaks from lowest to highest energy with the notation L = 0, 1, 2, and 3, in accordance with Ref. 3. The L = 0 and L = 1 resonances, which play a major role in optical spin control, are the lowest-energy transitions and are furthest from the free exciton peak.…”

Section: Samples and Experimental Setupmentioning

confidence: 98%

“…Emission linewidths less than 0.1 meV can be routinely observed for donor-bound exciton (D 0 X) transitions in high-purity GaAs. [2][3][4] In many respects, neutral donors in semiconductors resemble quantum dots (QDs), but without the complication of large inhomogeneous broadening common to epitaxially grown QD systems. The robust spin coherence and the atomic-like D 0 X transitions in GaAs have enabled the experimental realization of coherent optical phenomena, such as coherent population trapping and electromagnetically induced transparency associated with donor-bound electrons.…”

Section: Introductionmentioning

confidence: 99%

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Coherent spin dynamics of donor bound electrons in GaAs

et al. 2011

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We report experimental studies of coherent spin dynamics of donor-bound electrons in high-purity GaAs by using transient differential transmission. The donor-bound exciton transitions, which are not visible in the linear absorption spectrum, are spectrally resolved in the nonlinear differential transmission spectra. The spin beats in the transient differential transmission response, arising from electron spin precession in an external magnetic field, are investigated with the pump and probe coupling to various donor-bound exciton transitions. The spectral dependence of the spin beats provides important information on the polarization selection rule for the underlying donor-bound exciton transitions. The polarization selection rules deduced from these experiments indicate that contributions from higher-energy donor-bound exciton transitions can severely limit the effectiveness of optical spin control using mechanisms such as polarization-dependent optical Stark shifts.

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Section: Samples and Experimental Setupmentioning

confidence: 95%

Section: Samples and Experimental Setupmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Coherent spin dynamics of donor bound electrons in GaAs

et al. 2011

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“…Coherent manipulation of the excited state population and Rabi oscillations on donor transitions have been demonstrated [44,45,46], which suggest shallow impurities as model systems for quantum information processing. Recently, an optical method for the direct readout of the donor ground state population was proposed [47], which exploits the high scattering contrast between electrons in the donor ground and excited states with excitons. Far-infrared lasing was observed on transitions between Landau levels of the light-hole and heavy-hole valence band in p-type germanium in crossed electric and magnetic fields [48,49].…”

Section: Nonlinear Spectroscopy On Shallow Donor Transitionsmentioning

confidence: 99%

Nonlinear THz Spectroscopy of n-Type GaAs

Gaal

Reimann

Woerner

et al. 2007

Ultrafast Phenomena XV

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In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10 16 cm −3 to 10 17 cm −3 are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena.

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“…The three higher (lower) energy peaks are attributed to donor (acceptor) bound excitons 21 . To induce time-varying strain at that position, the 2 nd order flexural mode oscillating at 1.04 MHz was driven by a piezo actuator.…”

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confidence: 99%

Dynamic Control of the Coupling between Dark and Bright Excitons with Vibrational Strain

Ohta¹,

Okamoto²,

Tawara³

et al. 2018

Phys. Rev. Lett.

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We numerically and experimentally investigate strain-induced coupling between dark and bright excitons and its dynamic control using a gallium arsenide (GaAs) micromechanical resonator. Uniaxial strain induced by the mechanical resonance efficiently detunes the exciton energies and modulates the coupling strength via the deformation potential in GaAs. This allows optical access to the long-lived dark states without using any external electromagnetic field. This field-free approach could be expanded to a wide range of solid-state materials, leading to on-chip excitonic memories and circuits based on micromechanical resonators.

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Optically detected measurement of the ground-state population of an ensemble of neutral donors in GaAs

Cited by 16 publications

References 22 publications

Coherent spin dynamics of donor bound electrons in GaAs

Coherent spin dynamics of donor bound electrons in GaAs

Nonlinear THz Spectroscopy of n-Type GaAs

Dynamic Control of the Coupling between Dark and Bright Excitons with Vibrational Strain

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