Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States

Zhang, Zi-Huai; Stevenson, Paul; Thiering, Gergő; Rose, Brendon C.; Huang, Ding; Edmonds, Andrew M.; Markham, Matthew; Lyon, S. A.; Gali, Ádám; Leon, Nathalie P. de

doi:10.1103/physrevlett.125.237402

Cited by 48 publications

(41 citation statements)

References 52 publications

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“…It has been recently demonstrated that other point defects in diamond, silicon carbide and related wide-bandgap semiconductors can demonstrate similar functionalities. [28,[76][77][78][79] As can be seen, if the color center is excited optically, the presence of the host material can usually be ignored, and the color center can be treated as an atom. Undeniably, there is interaction with phonons (both bulk and localized), which affects the emission spectrum, quantum yield, and spin coherence times.…”

Section: Color Centers Under Optical Excitationmentioning

confidence: 99%

“…Recently, the SiV 0 center was proposed as a better alternative to the NV − center mostly due to its exceptionally high Debye-Waller factor. [77] However, in natural diamond, undoped and lightly doped CVD and HPHT diamond, and even doped diamond samples, the SiV center is usually found in the SiV − charge state. [36,85,127,163] In thermal equilibrium, the occupation of (−1) charge states of the SiV center is given by Gibb's distribution [164]…”

Section: Charge State Stabilization By Dopingmentioning

confidence: 99%

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Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Fedyanin

2021

Adv Quantum Tech

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Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single-photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.

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Section: Color Centers Under Optical Excitationmentioning

confidence: 99%

Section: Charge State Stabilization By Dopingmentioning

confidence: 99%

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Fedyanin

2021

Adv Quantum Tech

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“…Exploring the temperature-dependence of the I − PL dips would constitute a worthwhile extension to our work that might offer further insights into orbital averaging processes that dominate the NV's photo-physics at elevated temperatures [15]. Importantly, the method we demonstrated and applied here is not limited to NV centers alone -the excited state structure of any colour center exhibiting dark states that can be populated through magnetic field tunable ESLACs, such as the neutral Silicon-Vacancy center in diamond [41], could be investigated as well. NV To obtain further, quantitative insights, into the photo-physics of NV centers at low temperature we employ an extended version of a classical rate-equation model of the NV's magnetic-field dependent photo-physics [12,17], which explicitly takes into account the low-temperature excited state structure of NV − [26].…”

mentioning

confidence: 92%

Low temperature photo-physics of single NV centers in diamond

Happacher,

Broadway,

Reiser

et al. 2021

Preprint

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We investigate the magnetic field dependent photo-physics of individual Nitrogen-Vacancy (NV) color centers in diamond under cryogenic conditions. At distinct magnetic fields, we observe significant reductions in the NV photoluminescence rate, which indicate a marked decrease in the optical readout efficiency of the NV's ground state spin. We assign these dips to excited state level anti-crossings, which occur at magnetic fields that strongly depend on the effective, local strain environment of the NV center. Our results offer new insights into the structure of the NVs' excited states and a new tool for their effective characterization. Using this tool, we observe strong indications for strain-dependent variations of the NV's orbital g-factor, obtain new insights into NV charge state dynamics, and draw important conclusions regarding the applicability of NV centers for low-temperature quantum sensing.

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“…Scaling up faces the challenge of improving its optical performance with tailored nanostructures [33], which remains difficult owing to the NV's sensitivity to nearby surfaces as a result of its permanent electric dipole moment [34,35]. In contrast, the group-IV color centers [36][37][38][39][40][41][42][43][44][45] are naturally compatible with photonic nanostructures owing to their inversion symmetry [36,46], and collection efficiencies exceeding 90% have been recently demonstrated [47][48][49][50]. Of these, the negatively charged silicon-vacancy center (SiV) is the most studied, with demonstrations of coherent control of its ground state by microwave [51], all-optical [52], and acoustic [53] drive techniques.…”

Section: Introductionmentioning

confidence: 99%

Quantum control of the tin-vacancy spin qubit in diamond

Debroux,

Michaels,

Purser

et al. 2021

Preprint

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I. Tin-vacancy electronic structure model A. Tin-vacancy Hamiltonian B. Microwave drive of spin qubit C. Microwave drive results D. Realizing a lambda scheme II. Characterization of tin-vacancy lambda scheme parameters III. Modelling all-optical coherent control A. Analytical model B. Master equation model C. Gate fidelities IV. Sample fabrication V. Equipment set-up A. Experimental details on primary optical system B. Experimental details on second optical system C. Measurement conditions for main-text data VI. Coherent population trapping model and simulations VII. Intensity-correlation measurement under resonant excitation VIII. Ramsey signal analysis A. Serrodyne frequency ω S B. Two-photon detuning δ C. Differential AC Stark effect ∆ AC D. Ramsey simulation IX. Spin lifetime T 1 measurement

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Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States

Cited by 48 publications

References 52 publications

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Low temperature photo-physics of single NV centers in diamond

Quantum control of the tin-vacancy spin qubit in diamond

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