Optically addressed near and long-wave infrared multiband photodetectors

Cellek, O. O.; Reno, John L.; Zhang, Yong-Hang

doi:10.1063/1.4729004

Cited by 8 publications

(3 citation statements)

References 28 publications

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“…Gallium arsenide (GaAs) is widely used in the fabrication of optoelectronic devices, including photovoltaics 1,2 , photodetectors [3][4][5][6][7][8] , and lasers 9,10 . These devices often implement heavily doped layers, at which point long-wavelength, sub-bandgap absorption becomes a concern 11 .…”

Section: Introductionmentioning

confidence: 99%

Determination of optical constants of n- and p-type GaAs as a function of carrier concentration

Dickerson,

McElearney,

Grossklaus

et al. 2024

Optical Components and Materials XXI

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Variable angle spectroscopic ellipsometry was used to determine the optical properties of n-and p-type GaAs over a doping range of 4.610 16 to 9.310 18 cm -3 and a spectral range of 190 nm to 30 µm. Increased doping concentration was observed to have several distinct effects on the samples' optical properties: the band edge broadens and shifts to a higher energy; the E 1 and (E 1 + ∆ 1 ) absorption peaks blur together; the E 2 absorption peak decreases; sub-bandgap, infrared absorption increases. Additionally, the doping effects are generally stronger for n-type than for p-type GaAs. These findings will help inform future design of optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Determination of optical constants of n- and p-type GaAs as a function of carrier concentration

Dickerson,

McElearney,

Grossklaus

et al. 2024

Optical Components and Materials XXI

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show abstract

“…These peculiar findings at 2D interfaces have provided alternative and intriguing avenues to explore innovative applications in photodetection. Some salient examples include the high-performance ultraviolet photodetector based on AlGaN/GaN, [14] visible photodetector based on MgZnO/ZnO, [15] longwavelength infrared photodetector based on AlGaAs/GaAs, [16][17][18] etc. Although these 2DEG systems have been exploited in detecting photons with different energies, the reports of 2DEG in detecting MIR photons are rare.…”

Section: Introductionmentioning

confidence: 99%

Applying 2DEG in High‐Performance Mid‐Infrared Photodetection

Wang

Shen

et al. 2023

Advanced Optical Materials

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High‐speed and highly sensitive infrared photodetectors are regarded as one of the most essential components in modern photonic devices and technology because of constantly emerging application scenarios. In this paper, an ultrafast and extremely low noise mid‐infrared (MIR) photodetector is reported at both room and cryogenic temperatures by leveraging the high‐mobility 2D electron gas (2DEG) at the polar CdTe/PbTe heterostructure interface. The detector simultaneously exhibits a peak detectivity of ≈4.2 × 1011 Jones with rapid response in the order of 10 ns, which is substantially superior to the state‐of‐the‐art 2DEG MIR detectors made of 2D layered materials. The ultrafast response with extremely low noise of the 2DEG photodetector is attributed to the unique band alignment at the interface. The practical infrared imaging application is further showcased using the 2DEG MIR detector by revealing the fine features of a MIR radiation target. This work highlights the promising prospect of utilizing the unique 2DEG interface in the field of high‐speed and highly sensitive MIR detection.

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“…ultiband infrared (IR) detection is highly desirable for various applications such as hyperspectral imaging, missile early warning, and target identification. [1][2][3][4] Traditional technology realizes multiband detection by utilizing single spectral focal plane arrays (FPAs) combined with filters and silicon readout integrated circuits (Si ROIC). 5) These systems require beams splitters, lenses, bandpass filters, and complex optical alignment, making the technology quite high in cost.…”

mentioning

confidence: 99%

Ge-based triple-band infrared photodetector

Zhu

et al. 2018

Appl. Phys. Express

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A triple-band infrared photodetector is developed by doping sulfur into germanium. The photocurrent spectrum at 20 K shows that there are three response bands at about 1.4, 1.6, and 6.5 µm, indicating the realization of triple-band detection. The triple response bands are attributed to the electronic transitions from the valence band to the conduction band at the Γ and L points, and from the impurity band to the conduction band, respectively. At 4 K, the overall blackbody detectivity is ∼1.0 × 1011 cm Hz1/2/W. We provide a new route for realizing multiband infrared detectors.

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Optically addressed near and long-wave infrared multiband photodetectors

Abstract: Binary superlattice quantum-well infrared photodetectors for long-wavelength broadband detection Appl. Phys. Lett. 84, 5127 (2004); 10.1063/1.1764932Quantum-well infrared photodetectors with digital graded superlattice barrier for long-wavelength and broadband detection Appl.

Cited by 8 publications

References 28 publications

Determination of optical constants of n- and p-type GaAs as a function of carrier concentration

Determination of optical constants of n- and p-type GaAs as a function of carrier concentration

Applying 2DEG in High‐Performance Mid‐Infrared Photodetection

Ge-based triple-band infrared photodetector

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