2006
DOI: 10.1016/j.tsf.2005.11.022
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Optically active Er3+–Yb3+ codoped Y2O3 films produced by pulsed laser deposition

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Cited by 42 publications
(22 citation statements)
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“…In contrast, thin film growth methods typically involve deposition on oxidized silicon wafers (the oxide layer on the silicon providing the lower cladding layer) or other substrates, thus potentially allowing for integration with other devices on the same substrate and fabrication of devices over a large area. Methods which have been utilized for depositing Er-doped waveguiding films include atomic layer deposition [129,151], dip-coating [152], flame hydrolysis [32,153], high vacuum chemical vapour deposition (HV-CVD) [154], plasma-enhanced chemical vapour deposition (PECVD) [83,127,138,[155][156][157], pulsed laser deposition (PLD) [59,126,145,[158][159][160][161][162][163], reactive cosputtering [68,84,87,128,[164][165][166], RF-sputtering [40,98,131,133,137,[167][168][169][170], the sol-gel method [134,[171][172][173][174][175]…”
Section: Waveguide Fabrication Methodsmentioning
confidence: 99%
“…In contrast, thin film growth methods typically involve deposition on oxidized silicon wafers (the oxide layer on the silicon providing the lower cladding layer) or other substrates, thus potentially allowing for integration with other devices on the same substrate and fabrication of devices over a large area. Methods which have been utilized for depositing Er-doped waveguiding films include atomic layer deposition [129,151], dip-coating [152], flame hydrolysis [32,153], high vacuum chemical vapour deposition (HV-CVD) [154], plasma-enhanced chemical vapour deposition (PECVD) [83,127,138,[155][156][157], pulsed laser deposition (PLD) [59,126,145,[158][159][160][161][162][163], reactive cosputtering [68,84,87,128,[164][165][166], RF-sputtering [40,98,131,133,137,[167][168][169][170], the sol-gel method [134,[171][172][173][174][175]…”
Section: Waveguide Fabrication Methodsmentioning
confidence: 99%
“…The conditions for particle generation in a dispersed system Carrier Gas (air) flow rate, F a  10 5 (m 3 However, for the conditions in this experimental work, the percolation criterion, u is less than the critical volume fraction u à = 0.16 [20], implying the possibility for excessive porosity formation. FE-SEM micrographs are presented at Fig.…”
Section: Tablementioning
confidence: 77%
“…[1][2][3][4][5]. They exhibit the unique property of emitting visible light following photoexcitation in near infrared region.…”
Section: Introductionmentioning
confidence: 99%
“…Upconversion luminescence from Er 3? contaminants cannot be ruled out as it also produces emission bands around 550 and 660 nm (but not around 760 nm) [35,36], but it is expected to be weaker owing to its lower concentration in the starting material.…”
Section: Resultsmentioning
confidence: 99%