Optically activated planar GaAs switches for DC applications

Cola, A.; Quaranta, F.; Vasanelli, L.; Bertolucci, E.; Conti, Maurizio; Russo, Paolo; Bisogni, G.; Bottigli, U.; Fantacci, Maria Evelina; Stefanini, A.; Fucci, R.; Melone, G.; Rossi, Riccardo; Stefanini, G.

doi:10.1016/s0168-9002(98)00776-1

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…[l], [2] and will be summarized here. For low energy irradiation, both types of device were mounted on a SMA connector for support, with aluminum microbonding for biasing.…”

Section: Methodsmentioning

confidence: 99%

“…In recent papers [l], [2] we investigated the use of Schottky diodes and special metal-semi-insulator-metal lateral devices -prepared from a 200-pm-thick Semi-Insulating Gallium Arsenide (SI-GaAs) substrate -as high-voltage electrical switches, to be operated in dc mode (single ON/OFF cycle), either in a normally closed or a normally open configuration (respectively, in series or in parallel with the load). They can be optically activated with cw red light fkom a LED or a low-power diode laser.…”

Section: Introductionmentioning

confidence: 99%

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Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

Bertolucci

Conti²,

Mettivier³

et al. 1999

IEEE Trans. Nucl. Sci.

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Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in de mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6x10(15)) p/cm(2)) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1x10(14) p/cm(2)) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of the I-V curves in the dark have been observed, with at most a fourfold increase of the leakage current: after exposure, however, the breakdown voltage decreases significantly. For high energy irradiation, we observed - for the vertical Schottky diodes biased at -600 V - an increase of the leakage current and a reduction of the photocurrent after irradiation, with respect to pre-irradiation conditions. For these diodes, the reduction of the photocurrent/dark current ratio was 25:1. At the same proton energy, an analogous behaviour was shown by the planar devices, but after irradiation the current gain may reduce over three orders of magnitude

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“…[l], [2] and will be summarized here. For low energy irradiation, both types of device were mounted on a SMA connector for support, with aluminum microbonding for biasing.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

Bertolucci

Conti²,

Mettivier³

et al. 1999

IEEE Trans. Nucl. Sci.

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Radiation damage tests of GaAs HV switches for MSGCs bias control

Bisogni

Bottigli

Fantacci

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

Bertolucci¹,

Conti²,

Mettivier³

et al.

1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat.

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Semi-insulating gallium arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6×1015 p/cm2) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1×1014 p/cm2) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of the I-V curves in the dark have been observed, with at most a fourfold increase of the leakage current: after exposure, however, the breakdown voltage decreases significantly. For high energy irradiation, we observed-for the vertical Schottky diodes biased at -600 V-an increase of the leakage current and a reduction of the photocurrent after irradiation, with respect to pre-irradiation conditions. Produces up to a 25-times For these diodes, the reduction of the photocurrent/dark current ratio was 25:1. At the same proton energy, an analogous behavior was shown by the planar devices, but after irradiation the current gain may reduce over three orders of magnitud

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Optically activated planar GaAs switches for DC applications

Cited by 3 publications

References 3 publications

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

Radiation damage tests of GaAs HV switches for MSGCs bias control

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

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