Optical waveguide and 1.54 μm photoluminescence properties in RF sputtered Er/Yb-doped ZnO thin films

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating

“…Rare-earth elements have intense emission peaks in the visible and near IR region due to their 4f intra-shell transitions that can generate narrow and intense emission lines [46,47]. Many studies focus on rare-earth element such as (Er and Yb) doped ZnO to enhance the structure and optical properties using different techniques [48][49][50][51][52]. Whereas only a few research studies reported the effect of rare-earth doping on electrical properties of Schottky diodes based-on ZnO.…”

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu2+ and Li+ Co‐Substituted Wurtzite ZnO

“…[2,3] Moreover, it is quite abundant and can be easily fabricated in the form of thin films for various applications. [11,12] In addition, ZnO is also employed in a wide range of applications such as sensors, [13] light-emitting devices, [14][15][16] solar cell electrodes, [17] optical-waveguide devices, [18][19][20] optoelectronic devices. [21][22][23][24][25] The direct band gap of ZnO is about 3.37 eV [26,27] with a high binding energy of about 60 meV and an intrinsic n-type conductivity.…”