Optical transitions on GaAs [110] surface

Berkovits, V. L.; Makarenko, I. V.; Minashvili, T. A.; Safarov, V. I.

doi:10.1016/0038-1098(85)90030-4

Cited by 75 publications

(24 citation statements)

References 5 publications

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“…On this assumption reflectance anisotropy spectroscopy (RAS) has been developed [6,7], since its early applications to study the optical properties of semiconductor surfaces in Ultra-High-Vacuum (UHV) [8].…”

Section: Original Papermentioning

confidence: 99%

Detection of surface states anisotropies at GaAs(001)(2 × 4) decapped surfaces

Goletti

Emiliani

Schintke

et al. 2005

Physica Status Solidi (b)

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The surface or bulk origin of the optical anisotropies detected by reflectance anisotropy spectroscopy (RAS) at GaAs(001)(2 × 4) surfaces has been extensively investigated in the last years and a quite general agreement has been reached that the dominating character would be bulk-like. Nevertheless, a very recent paper [F. Arciprete et al., Phys. Rev. B 69, 081308(R) (2004)] has again issued the presence of surface states contributions in optical anisotropies, revealing a structure at 2.5 eV due to surface states, in addition to the well known features around 2.9 eV and 4.5 eV related to the bulk critical points E 1 and E 0 ′. We have carried out a new experiment to prove this conclusion by following the changes in the optical anisotropy of a GaAs(001)(2 × 4) surface in the range 2.0 -5.0 eV induced by Ag/Sb-codeposition. The interface Ag/GaAs(001) is known to be not reactive. Due to its surfactant effect, codeposition of Sb leads to a nearly epitaxial growth of the Ag overlayer. We show that at the early stages of deposition (nominally at 0.25 monolayer) an evident modification of the RAS spectrum is detected at 2.5 eV, well below the photon energy (2.9 eV) where bulk-like anisotropies appear. We relate this modification to the disappearance of surface states characteristic of the (2 × 4) reconstruction, in excellent agreement with previous conclusions and experiments.

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Section: Original Papermentioning

confidence: 99%

Detection of surface states anisotropies at GaAs(001)(2 × 4) decapped surfaces

Goletti

Emiliani

Schintke

et al. 2005

Physica Status Solidi (b)

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“…This geometry results in a cancellation of the bulk response by symmetry and RAS becomes a probe of the surface anisotropy which is sensitive to sub monolayer coverages. RAS was developed for the study of semiconductor surfaces [48,49] and as a monitor of semiconductor growth [50]. It has also been applied to the study of metal surfaces [47,51].…”

Section: Introductionmentioning

confidence: 99%

A reflectance anisotropy spectroscopy study of underpotential deposition of copper onto Au(110)

Farell

Lucas

et al. 2005

Physica Status Solidi (b)

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The underpotential deposition of Cu on Au(110) has been monitored by Reflection Anisotropy Spectroscopy (RAS). The changes in the intensity of spectral features observed at 2.6 eV and 3.4 eV in the RA spectrum of Au (110) that are induced by the deposition of Cu occur on different timescales. It is suggested that these changes arise, respectively, from the partial quenching of surface states and from changes in surface morphology.

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“…The technique itself was introduced in the mid 1980s [5][6][7] and is nowadays used in both surface science and in semiconductor technology ͓as growth control in gaseous environments, such as in metal organic vapor phase epitaxy ͑MOVPE͒, where electron based methods cannot be applied 8,9 ͔. The origin of the RAS response from anisotropic surfaces is quite well understood and can be calculated ab initio within density functional based theories.…”

Section: Introductionmentioning

confidence: 99%

Free-electron response in reflectance anisotropy spectra

et al. 2006

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Reflectance anisotropy spectra ͑RAS͒, extended into the near infrared spectral region, of anisotropic metal islands, metal surfaces, and atomic nanowires are analyzed with respect to anisotropies in the optical response of the free-electron gas of such low dimensional metal structures. In order to distinguish conductivity and morphology effects, both a phenomenological anisotropic Drude model and an effective medium model using ellipsoidal metal inclusions are used to model the spectra. In some cases ͑metal islands͒ the RAS response is dominated by the free-electron contribution, while this contribution is significantly smaller for the metal surfaces and nanowires in the accessible spectral range.

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Optical transitions on GaAs [110] surface

Cited by 75 publications

References 5 publications

Detection of surface states anisotropies at GaAs(001)(2 × 4) decapped surfaces

Detection of surface states anisotropies at GaAs(001)(2 × 4) decapped surfaces

A reflectance anisotropy spectroscopy study of underpotential deposition of copper onto Au(110)

Free-electron response in reflectance anisotropy spectra

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