Optical transitions in GaAs:Fe studied by Fourier-transform infrared spectroscopy

Pressel, K.; Rückert, G.; Dörnen, A.; Thonke, Klaus

doi:10.1103/physrevb.46.13171

Cited by 26 publications

(26 citation statements)

References 12 publications

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“…Consequently, we report only the FT-PL measurements of the CIGS films done at 87 K. The FT-PL spectra were instrument-corrected using incandescent lamp radiation reflected from a tube containing potassium bromide at the sample position, and the Nicolet FTRaman correction software. This approach to FT-PL spectroscopy is similar in its use of external laser excitation sources to methods described previously [6][7][8][9], except for our utilization of the FT-Raman accessory for PL collection.…”

Section: Instrumentationmentioning

confidence: 99%

“…The primary difference between this approach and those cited previously [6][7][8][9] is the capability for software control of the intensity of the 1064-nm Nd:YAG excitation intensity through a variable neutral density filter, and in the quality of the two Kaiser holographic notch filters. Each of the Kaiser filters offer Rayleigh line rejection of 10 6 and a 50% T bandwidth of 700 cm -1 centered at 9400 cm -1 (1064 nm), with fairly high transmittance and no interference fringe artifacts between 9000 and 3700 cm -1 .…”

Section: Instrumentationmentioning

confidence: 99%

“…A variety of PL measurements, with FTIR detection that exploits this advantage, have been reported on semiconductors such as GaAs [6], GaInAs [7], and porous silicon [8]. Rowell [9] reports FTIR-assisted PL measurements on a variety of NIR PL emitters, and reviews the advantages and limitations of the technique.…”

Section: Introductionmentioning

confidence: 99%

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Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

Webb

Keyes

Ahrenkiel

et al. 1999

Vibrational Spectroscopy

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We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. We present here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm -1 , enabling FTluminescence measurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.

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Section: Instrumentationmentioning

confidence: 99%

Section: Instrumentationmentioning

confidence: 99%

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Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

Webb

Keyes

Ahrenkiel

et al. 1999

Vibrational Spectroscopy

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“…[20][21][22][23] is attributed to a transition within the ground term of doubly ionized iron substituting group III elements at random sites of symmetry Td. In the framework of crystal-field theory, the ground term 5 D of the free ion splits into doublet ( 5 Γ 3 ) and triplet ( 5 Γ 5 ) orbital multiplets, separated by energy Δ, the former lying below the latter.…”

Section: Theoretical Formalismmentioning

confidence: 99%

“…Prior to 1985 [19], no isotopic effect had been observed in the near infrared absorption spectra of iron-doped InP, GaAs or GaP. Present FTIR spectroscopy has permitted the observation of fine structures in InP:Fe [20,21], GaP:Fe [22], and GaAs:Fe [23] which are attributed to the zero-phonon lines of the four stable isotopes of iron present in the sample in their natural abundances [ 54 Fe (5.82%), 56 Fe (91.18%), 57 Fe (2.1%), and 58 Fe (0.28%) [24]] and have intensities in similar proportions. The lines appear in order of increasing isotopic mass, the transition for 54 Fe being the lowest in energy.…”

Section: Introductionmentioning

confidence: 99%

Isotope splitting of the zero-phonon line of Fe2+ in cubic III–V semiconductors

Colignon

Mailleux

Kartheuser

et al. 1998

Solid State Communications

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A theoretical study of the isotopic-mass dependence of the internal transitions of Fe 2+ at a cation site in a cubic zinc-blende semiconductor is presented. The model used is based on crystal-field theory and includes the spinorbit interaction and a weak dynamic Jahn-Teller coupling between the 5 Γ 5 excited manifold of Fe 2+ and a local vibrational mode (LVM) of Γ 5 symmetry. The mass dependence of the LVM frequency is described, in the harmonic approximation, within two different limits: the rigid-cage model and a molecular model. In the rigidcage model, the Fe 2+ ion undergoes a displacement but the rest of the lattice is fixed. In this case, a simple M -1l2 dependence of the frequency is obtained and the Jahn-Teller energy, E JT is independent of the mass. In the molecular model, the four nearest neighbors of the magnetic ion are allowed to move and the LVM then behaves as the Γ 5 mode of a MX 4 tetrahedral molecule leading to a more complicated dependence of the frequency on the isotopic mass and to a mass-dependence of E JT . The theoretical results obtained with these two models are compared with the observed isotopic shifts of the zero-phonon lines in InP:Fe and GaP:Fe corresponding to an optical transition between the vibronic Γ 1 ground state and the lowest Γ 5 state originating from the 5 Γ 5 excited orbital multiplet. A prediction of the isotopic shifts of the zero-phonon line in GaAs:Fe is also presented.

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Fe in III–V and II–VI semiconductors

Malguth

Hoffmann

Phillips

2008

Physica Status Solidi (b)

114

110

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Many theoretical and experimental studies deal with the realization of room‐temperature ferromagnetism in dilute magnetic semiconductors (DMS). However, a detailed quantitative understanding of the electronic properties of transition metal doped semiconductors has often been neglected. This article points out which issues concerning electronic states and charge transfers need to be considered using Fe as an example. Methods to address these issues are outlined, and a wealth of data on the electronic properties of Fe doped III–V and II–VI compound semiconductors that have been obtained over a few decades is reviewed thoroughly. The review is complemented by new results on the effective‐mass‐like state consisting of a hole bound to Fe2+ forming a shallow acceptor state.The positions of established Fe3+/2+ and Fe2+/1+ charge transfer levels are summarized and predictions on the positions of further charge transfer levels are made based on the internal reference rule. The Fe3+/4+ level has not been identified unambiguously in any of the studied materials. Detailed term schemes of the observed charge states in tetrahedral and trigonal crystal field symmetry are presented including hyperfine structure, isotope effects and Jahn–Teller effect. Particularly, the radiative transitions Fe3+(4T1 → 6A1) and Fe2+(5E → 5T2) are analyzed in great detail.An effective‐mass‐like state [Fe2+, h] consisting of a hole bound to Fe2+ is of great significance for a potential realization of spin‐coupling in a DMS. New insights on this shallow acceptor state could be obtained by means of stress dependent and temperature dependent absorption experiments in the mK range. The binding energy and effective Bohr radius were determined for GaN, GaP, InP and GaAs and a weak exchange interaction between the hole and the Fe2+ center was detected.With regard to the Fe3+ ground state, 6A1, in GaP and InP, the hyperfine structure level Γ8 was found to be above the Γ8 level.All results are discussed with respect to a potential realization of a ferromagnetic spin‐coupling in DMSs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optical transitions in GaAs:Fe studied by Fourier-transform infrared spectroscopy

Cited by 26 publications

References 12 publications

Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

Fourier transform-luminescence spectroscopy of semiconductor thin films and devices

Isotope splitting of the zero-phonon line of Fe2+ in cubic III–V semiconductors

Fe in III–V and II–VI semiconductors

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