Optical Third-Order Mixing in GaAs, Ge, Si, and InAs

Wynne, James J.

doi:10.1103/physrev.178.1295

Cited by 296 publications

(76 citation statements)

References 18 publications

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“…It is known that carrier contribution to the nonlinear susceptibility of conventional semiconductors increases when the Fermi level moves toward the non-parabolic region of the conduction or valence band. 32,33 Thus, surface doping of Bi 2 Se 3 may indeed lead to appreciable change of its surface nonlinear susceptibility. Further theoretical and experimental studies of how surface doping affects surface nonlinear susceptibility in relation to changes of surface band structure and surface carrier density will be useful.…”

Section: Resultsmentioning

confidence: 99%

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Shi

Yao

et al. 2016

Phys. Rev. B

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Second harmonic generation (SHG) from three-dimensional topological insulators originates from both surface and bulk, which does not allow probing of surface states unless the measurement can separate the two contributions. In this study, we used combined measurements of transmitted and reflected SHG from epitaxially grown Bi 2 Se 3 thin films of different thickness on BaF 2 , and a bulk Bi 2 Se 3 crystal, to deduce surface and bulk nonlinear susceptibilities of Bi 2 Se 3 separately. We found that the surface * E-mail: yrshen@berkeley.edu, wtliu@fudan.edu.cn 2 contribution to SHG was comparable to that from the bulk of the crystal, but becomes dominant in ultrathin films. In the latter case, contributions from both air/Bi 2 Se 3 and Bi 2 Se 3 /BaF 2 interfaces were significant, and exhibited a strong out-of-plane polar ordering. The bulk contribution came mainly from the space charge region (SCR), which was formed by Se vacancies aggregated at the air/Bi 2 Se 3 interface; its magnitude can provide an estimate on the field strength in the SCR. Clarification of surface and bulk contributions to SHG can help nonlinear optical techniques be used as a versatile in situ probe for topological insulators.3

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Section: Resultsmentioning

confidence: 99%

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Shi

Yao

et al. 2016

Phys. Rev. B

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“…In this case, Eq. (6) is simplified considerably owing to the intrinsic permutation symmetry of χ e 1122 (−ω; ω, [105,[118][119][120][121]. As a result, Eq.…”

Section: Third-order Susceptibility Of Siliconmentioning

confidence: 99%

“…It has been measured in the past four decades through third-harmonic generation [86, [122][123][124][125], degenerate FWM [120,121], and the z-scan technique [87]. The magnitude of ρ is quite dispersive in the opaque region (hω > E g ) [86], but it becomes nearly constant forhω < E g [86,87,120]. The measured value of ρ is close to 1.27 in the telecom band, with a negligible imaginary part [87].…”

Section: Third-order Susceptibility Of Siliconmentioning

confidence: 99%

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Lin¹,

Painter²,

Agrawal³

2007

Opt. Express

844

699

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Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting considerable attention. In this review, we provide a unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications. We begin with a description of the third-order nonlinearity of silicon and consider the tensorial nature of both the electronic and Raman contributions. The generation of free carriers through two-photon absorption and their impact on various nonlinear phenomena is included fully within the theory presented here. We derive a general propagation equation in the frequency domain and show how it leads to a generalized nonlinear Schrödinger equation when it is converted to the time domain. We use this equation to study propagation of ultrashort optical pulses in the presence of self-phase modulation and show the possibility of soliton formation and supercontinuum generation. The nonlinear phenomena of cross-phase modulation and stimulated Raman scattering are discussed next with emphasis on the impact of free carriers on Raman amplification and lasing. We also consider the four-wave mixing process for both continuous-wave and pulsed pumping and discuss the conditions under which parametric amplification and wavelength conversion can be realized with net gain in the telecommunication band. 1678-1687 (2006). 4. R. A. Soref, S. J. Emelett, and W. R. Buchwald, "Silicon waveguided components for the long-wave infrared region," J. Opt. A: Pure Appl. Opt. 8, 840-848 (2006). 5. M. Dinu, F. Quochi, and H. Garcia, "Third-order nonlinearities in silicon at telecom wavelengths," Appl. Phys.Lett. 82, 2954-2956 (2003). 6. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman amplification in silicon waveguides," Opt. Express 11, 1731-1739 (2003). 7. H. K. Tsang, C. S. Wong, T. K. Liang, I. E. Day, S. W. Roberts, A. Harpin, J. Drake, and M. Asghari, "Optical dispersion, two-photon absorption, and self-phase modulation in silicon waveguides at 1.5 μm wavelength," Appl. Phys. Lett. 80, 416-418 (2002 3685-3697 (1973). 109. T. R. Hart, R. L. Aggarwal, and B. Lax, "Temperature dependence of Raman scattering in silicon," Phys. Rev. B 1, 638-642 (1970). 110. A. Zwick and R. Carles, "Multiple-order Raman scattering in crystalline and amorphous silicon," Phys. Rev. B 48, 6024-6032 (1993). 111. R. Loudon, "The Raman effect in crystals," Adv. Phys. 50, 813-864 (2001). 112. J. R. Sandercock, "Brillouin-scattering measurements on silicon and germanium," Phys. Rev. Lett. 28, 237-240 (1972). 113. M. Dinu, "Dispersion of phonon-assisted nonresonant third-order nonlinearities," IEEE J. Quantum Electron.39, 1498-1503 (2003).

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“…This study reports on determination of nonlinear optical parameters (third order nonlinear susceptibility (χ (3) ) and nonlinear refractive index (n 2 )) from linear optical parameters (χ 1 ), n 0 and E g ) using semi-empirical relations [25] in the long wavelength limit. Approximate determination of χ (3) can be performed using the generalized Miller's rule [26,27]:…”

Section: Nonlinear Optical Analysismentioning

confidence: 99%

Studies on In_x(As₂Se₃)_1-x thin films using variable angle spectroscopic ellipsometry (VASE)

Amin¹

2015

Materials Science-Poland

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The results of multi-angle ellipsometrical measurements of thermally evaporated In x (As 2 Se 3 ) 1−x (x = 0, 0.01, 0.05) films are presented. Optical parameters n and E g of thin In x (As 2 Se 3 ) 1−x films show that indium atoms were incorporated into the host matrix of As 2 Se 3 forming distinct features depending on the indium concentration. Refractive index, n, was found to decrease with the addition of In to the binary As 2 Se 3 . The real and imaginary parts of the dielectric function, ε and ε were also calculated from the obtained data and correlated with In concentration. It was found that ε decreases with the increase of In content while ε increases with the increase of In content. Absorption edge is shifted towards lower photon energy with the increase of In content. As a result, the optical energy gap decreases with increasing In content. This has been correlated with the chemical character of the additive as well as with the structural and bonding aspects of the amorphous composition. Nonlinear optical constants (χ (3) and n 2 ) were determined from linear optical parameters using semi-empirical relations in the long wavelength limit.

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Optical Third-Order Mixing in GaAs, Ge, Si, and InAs

Cited by 296 publications

References 18 publications

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Studies on In_x(As₂Se₃)_1-x thin films using variable angle spectroscopic ellipsometry (VASE)

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Optical Third-Order Mixing in GaAs, Ge, Si, and InAs

Cited by 296 publications

References 18 publications

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Studies on Inx(As2Se3)1-x thin films using variable angle spectroscopic ellipsometry (VASE)

Contact Info

Product

Resources

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Studies on In_x(As₂Se₃)_1-x thin films using variable angle spectroscopic ellipsometry (VASE)