Optical switching of single-electron tunneling in SiO2∕molecule∕SiO2 multilayer on Si(100)

Wakayama, Yutaka; Ogawa, Keiichi; Kubota, Tohru; Suzuki, Hitoshi; Kamikado, Toshiya; Mashiko, Shinro

doi:10.1063/1.1772867

Cited by 23 publications

(15 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[41][42][43][44][45][46][47][48][49][50][51] Relevant to our present discussion are recent demonstrations 12,13 that it can be used to determine the effective temperature in biased and current carrying junctions. This experimental effort has been accompanied by theoretical studies of various phenomena pertaining to what we may call junction spectroscopy.…”

mentioning

confidence: 90%

Raman scattering from biased molecular conduction junctions: The electronic background and its temperature

Galperin

Nitzan

2011

Phys. Rev. B

View full text Add to dashboard Cite

The existence of background in the surface enhanced Raman scattering (SERS) from molecules adsorbed on metal surfaces is known since the early studies this phenomenon, and is usually attributed to transitions between electronic states of the metal substrate. This paper reformulates the theory of this phenomenon in the framework of the non-equilibrium Green function (NEGF) formalism, which makes it possible to extend it to the case of Raman scattering from non-equilibrium (biased and current carrying) molecular junctions. Following recent experiments, we address in particular the Raman scattering measurement of current induced electronic heating. The Raman temperature, defined by fitting the ratio between the Stokes and anti-Stokes Raman signals to a Boltzmann factor is compared to another measure of electronic heating obtained by assuming that close to the molecule-metal contact the electronic distribution is dominated by the transmission process. We find that the Raman temperature considerably exceed this upper bound to the metal-electrons heating. In agreement with this observation we show that the Raman temperature reflects the electronic non-equilibrium in the molecular bridge itself. We also show that the Raman temperature concept breaks down at large bias.

show abstract

mentioning

confidence: 90%

Raman scattering from biased molecular conduction junctions: The electronic background and its temperature

Galperin

Nitzan

2011

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Application of external laser field promises ability to effectively control transport properties of molecular devices, 14 while Raman spectroscopy, together with scanning tunneling microscopy (STM) and inelastic electron tunneling spectroscopy (IETS) can serve as a diagnostic tool. 15,16 First experimental data in this direction include light induced switching behavior of molecular junctions, 17,18,19 voltage effects on fluorescence 20 of molecules in nanojunctions, and surface enhanced Raman scattering (SERS) from molecules positioned in narrow gaps between metal nanoparticles. 21,22,23,24 Theoretically opto-electronic properties of current carrying molecular junctions have been studied mostly within simple models.…”

Section: Introductionmentioning

confidence: 99%

Linear optical response of current-carrying molecular junction: A nonequilibrium Green’s function–time-dependent density functional theory approach

Galperin

Tretiak

2008

The Journal of Chemical Physics

View full text Add to dashboard Cite

We propose a scheme for calculation of linear optical response of current-carrying molecular junctions for the case when electronic tunneling through the junction is much faster than characteristic time of external laser field. We discuss relationships between nonequilibrium Green's function (NEGF) and time-dependent density functional theory (TDDFT) approaches and derive expressions for optical response and linear polarizability within NEGF-TDDFT scheme. Corresponding results for isolated molecule, derived within TDDFT approach previously, are reproduced when coupling to contacts is neglected.

show abstract

“…In this relation molecular conduction nanojunctions have been under intense study in the last few years [1,2,3,4]. Recently, light induced switching behavior in the conduction properties of molecular nanojunctions has been demonstrated [5,6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Light-induced current in molecular tunneling junctions excited with intense shaped pulses

2007

View full text Add to dashboard Cite

A theory for light-induced current by strong optical pulses in molecular-tunneling junctions is described. We consider a molecular bridge represented by its highest occupied and lowest unoccupied levels, HOMO and LUMO, respectively. We take into account two types of couplings between the molecule and the metal leads: electron transfer that gives rise to net current in the biased junction and energy transfer between the molecule and electron-hole excitations in the leads. Using a Markovian approximation, we derive a closed system of equations for the expectation values of the relevant variables: populations and molecular polarization that are binary, and exciton populations that are tetradic in the annihilation and creation operators for electrons in the molecular states. We have proposed an optical control method using chirped pulses for enhancing charge transfer in unbiased junctions where the bridging molecule is characterized by a strong charge-transfer transition. An approximate analytical solution of the resulting dynamical equation is supported by a full numerical solution. When energy transfer between the molecule and electron-hole excitations in the leads is absent, the optical control problem for inducing charge transfer with linearly chirped pulse can be reduced to the Landau-Zener transition to a decaying level. When chirp is fast with respect to the rate of the electron transfer, the Landau theory is recovered. The proposed control mechanism is potentially useful for developing novel opto-electronic single-electron devices with optical gating based on molecular nanojunctions.

show abstract

Optical switching of single-electron tunneling in SiO2∕molecule∕SiO2 multilayer on Si(100)

Cited by 23 publications

References 11 publications

Raman scattering from biased molecular conduction junctions: The electronic background and its temperature

Raman scattering from biased molecular conduction junctions: The electronic background and its temperature

Linear optical response of current-carrying molecular junction: A nonequilibrium Green’s function–time-dependent density functional theory approach

Light-induced current in molecular tunneling junctions excited with intense shaped pulses

Contact Info

Product

Resources

About