Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects

Duez, V.; Chaubet, M.; Vanbésien, O.; Lippens, D.

doi:10.1049/el:20000729

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…8. These conclusions are consistent with the results of a recent theoretical investigation into optical switching RITDs, in which it was demonstrated that holes trapped in the GaSb well can lead to significant changes in the conduction properties of the device [15].…”

Section: Discussionsupporting

confidence: 92%

Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits]

McMorrow

Magno

Bracker

et al. 2001

IEEE Trans. Nucl. Sci.

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Time-resolved charge-collection measurements performed on AlSb/InAs/GaSb resonant interband tunneling diodes (RITDs) with pulsed laser excitation exhibit complex behavior as a function of the device operating point. A model considering conventional charge-collection principles in combination with transient band-bending effects is proposed to describe the experimental results. In the proposed model, a transient distortion of the band structure of the device (transient band bending) induced by holes trapped in the GaSb valence band well modulates the dc current through the RITD. The manner in which this transient modulation is manifested in the experimental observable depends sensitively on the operating point of the device, giving rise to qualitatively different temporal signatures under different dc bias conditions. Index Terms-Charge collection, high electron mobility transistor (HEMT), monostable-bistable transition logic element (MOBILE), resonant interband tunneling diode (RITD), resonant tunneling diode (RTD), single-event effects (SEEs), single-event upset (SEU), transient band bending.

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Section: Discussionsupporting

confidence: 92%