Optical study of germanium nanostructures grown on a Si(118) vicinal substrate

Brémond, G.; Serpentini, M.; Souifi, A.; Guillot, G.; Jacquier, B.; Abdallah, M; Berbézier, Isabelle; Joyce, B. A.

doi:10.1016/s0026-2692(98)00135-9

Cited by 22 publications

(29 citation statements)

References 15 publications

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“…3͑a͒ further support the type-I band alignment of sample B. According to the formula Iϰ P m , where I represents the PL intensity and P the excitation power, 3 the coefficient m is found to be 0.78 and 0.99 for samples A and B, respectively. The sublinear power dependence of PL intensity of sample A is due to a typical saturation effects of the type-II alignment.…”

supporting

confidence: 64%

“…As the interface state density is finite, the PL intensity quickly saturates and m Ͻ1. 3,4 For sample B, mϳ1 and the linear relationship without saturation confirms the type-I band alignment.…”

mentioning

confidence: 61%

“…1 The photoluminescence ͑PL͒ results showed that the band alignment for the as-grown dots is a type-II structure, which means that the conduction band of the dots is higher than that of the Si matrix (⌬E c Ͼ0). [2][3][4] However, it is desirable to obtain the type-I dots which confine both electrons and holes within the dots for its many potential applications, such as single electron transistor and quantum computer. 5 It is worth noting that the band alignment of Ge x Si 1Ϫx /Si quantum well with x as low as 0.25 ͑Ref.…”

mentioning

confidence: 99%

“…The power-dependent PL measurements were widely used to study the band alignment of the GeSi quantum dots, [2][3][4] SiGe/Si quantum well, 11,12 and III-V heterostructures. 13 In the type-II band alignment quantum structure, a band bending occurs at the interfaces due to the Hartree potential, as seen in the insets of Fig.…”

mentioning

confidence: 99%

“…11 So, the significant PL blueshift of sample A indicates that the band alignment of the asgrown dot is type II, which is consistent with former studies on GeSi dots. [2][3][4] In contrast to sample A, the NP dot PL peak blueshift ͑1.5 meV͒ of sample B is much smaller than the value usually observed in Ge x Si 1Ϫx /Si type-II system. For example, even when the excitation power density increases from 1 to 4 W/cm 2 , the blueshift was as large as ϳ3.6 meV, in a 3-nmtype-II Ge 0.3 Si 0.7 /Si quantum well.…”

mentioning

confidence: 99%

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Effects of interdiffusion on the band alignment of GeSi dots

Wan

Luo

Jiang

et al. 2001

Applied Physics Letters

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The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.

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supporting

confidence: 64%

mentioning

confidence: 61%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Effects of interdiffusion on the band alignment of GeSi dots

Wan

Luo

Jiang

et al. 2001

Applied Physics Letters

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

et al. 2006

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The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4-1.8 lm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 lm.

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Buffer layer-assisted growth of Ge nanoclusters on Si

Li¹,

Wendelken²

2006

Nanoscale Res Lett

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In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties.

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Optical study of germanium nanostructures grown on a Si(118) vicinal substrate

Cited by 22 publications

References 15 publications

Effects of interdiffusion on the band alignment of GeSi dots

Effects of interdiffusion on the band alignment of GeSi dots

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Buffer layer-assisted growth of Ge nanoclusters on Si

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