Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure

Abstract

We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional electron gas. The Raman spectra contain a feature associated with the e1→e2 intersubband transition.

Excited states of donors bound toXvalleys in GaAs–AlAs type II structures

“…Since the successful growth of n-type Si-doped GaAsAlAs structures [7] the calculation of these binding energies have become important for the understanding of bistable shallow-deep silicon donors in GaAs-AlAs [8], silicon interdiffusion [9] and photoluminescence spectra such as obtained by Lee et al [10].…”