Optical studies of ZnO nanocrystals doped with Eu3+ ions

Optical and structural properties of Eu-diffused and doped ZnO nanowires

“…The study of Eu in ZnO has attracted interest for applications including visible red lasing [29], which was hampered by inefficient energy transfer from the ZnO host to the Eu 3+ ions [30][31][32]. When the red emission is dominant, it has generally been observed that defect states are involved in the energy transfer process [32][33][34][35]. It is clearly of interest to examine the properties of Eu-doped ZnO nanowires for potential interest in very low threshold emitters.…”

Bright Red Luminescence and Structural Properties of Eu<sup>3+</sup> Ion Doped ZnO by Solution Combustion Technique

“…In the last few decades, the semiconductor zinc oxide (ZnO) with a wide band gap energy (3.37 eV) at room temperature and high exciton binding energy (60 meV) [1], has been used as host material for the doping of rare-eart (RE) and transition metals (TM) ions, which exhibit optical and magnetic activity [2]- [6]. The REdoped ZnO nanocrystals have an high potential to be used in integrated optoelectronic devices such as infrared and visible (blue, green, red) luminescent devices because they present a highly efficient luminescence even at room temperature [7]- [11]; the emission process is determined by the internal dynamics of the RE 3+ electronics transitions governed by the relative energy of the 4f emitting level including the direct 4f-4f and indirect process 5 D 0 → 7 f i with i = 0 -4.…”

Many-body electronic structure calculations of Eu-doped ZnO

“…Wide band-gap semiconductors such as ZnO are attractive for ultraviolet light-emitting diodes, lasers and high-power photonic applications. In ZnO, rar-earth elements can be incorporated in the material and the long life times of the excited states allow for an easy realization of population inversion with promising applications in optoelectronic applications [1][2][3][4][5]. ZnO has a large band gap of 3.4 eV and a high thermal conductivity, enabling new electroluminescent devices.…”