The phase diagram and stability limits of diatomic solid nitrogen have been explored in a wide pressure-temperature range by several optical spectroscopic techniques. A newly characterized narrow-gap semiconducting phase η has been found to exist in a range of 80-270 GPa and 10-510 K. The vibrational and optical properties of the η phase produced under these conditions indicate that it is largely amorphous and back transforms to a new molecular phase. The band gap of the η phase is found to decrease with pressure indicating possible metallization by band overlap above 280 GPa.Despite early theoretical predictions for a transformation of nitrogen to a monoatomic state, 1-3 reliable experimental evidence became available only quite recently. 4,5 Optical spectroscopy, visual observations and electrical conductivity measurements showed that the material transforms to a semiconducting non-diatomic phase at 150 GPa (190 GPa at 80 K). 4,5 The transition to the nonmolecular state was predicted to be hindered by a large energy barrier and accompanied by a large volume discontinuity and hysteresis. 2,3 The latter was confirmed by visual observations which indicated that the high-pressure phase can be preserved to 17 GPa at low temperatures. 5 Characterization of the high-pressure phase (called η here) still remains an important issue because of the lack of structural studies and systematic spectroscopic data at different P-T conditions. Optical absorption spectra 4 reveal the presence of a low-frequency logarithmic Urbach tail 6 and a higher energy region, which obeys the empirical Tauc law. 7 This type of absorption edge is typical for amorphous semiconductors (see Ref. 8). Although being quite diagnostic, this observation still requires confirmation, as a highly disordered high-pressure structure is consistent with the nature of the transformation; i.e. a large volume change at a reconstructive phase transition can cause large shear stresses because of inhomogeneous nucleation of the high-pressure phase (see Ref. 9). Moreover, experiments demonstrate that two phases coexist in a wide pressure range (at 300 K), 4 thus making the characterization of the η phase even more difficult. Here we present new optical data over a wide P-T range indicating that high-pressure non-molecular phase is a largely amorphous, narrow gap semiconductor to at least 268 GPa. We examine the stability limits of the diatomic molecular state and present evidence for new transformations, including metallization by band overlap above 280 GPa.Four experiments were performed at room temperature with the maximum pressures varied from 180 to 268 GPa. Above 200 GPa pressure was determined using tunable red lines of Ti:sapphire laser combined with time resolving technique (Fig. 1). For low-temperature measurements we used a continuous-flow He cryostat, which allowed infrared and in situ Raman/fluorescence measurements. 10 High-temperature Raman and visible transmission measurements were performed with an externally heated cell. 11 In this case, infrared m...