Optical studies of II–VI alloy lattice dynamics

Investigation of II –VI alloy lattice dynamics by IR spectroscopic ellipsometry

“…The results of IR-ellipsometric studies are consistent with recent observations of lattice dynamics behaviour of II-VI alloys concerning the appearance of multiphonon structures close to the regions of vibrations predicted in the framework of the MREI two-mode model [9,[24][25][26][27]. Mixed crystals of compounds with a large difference of lattice constants and bond parameters, like ZnSe-BeSe, MnSe-BeSe, and CdSe-BeSe alloys, exhibit interesting evolution of vibrational spectra very sensitive to their composition.…”

Temperature‐Dependent Raman Study of Nanostructured and Multifunctional Materials

“…The examination of vibrational properties of Zn 1– x Cd x Se is a matter of special interest due to structural phase transition observed in this material with variation of composition x and temperature . There are also the strong indications that vibration properties of thin layers are not identical to those for bulk Zn 1– x Cd x Se mixed crystal . The Raman spectra of microcrystalline Zn x Cd 1‐ x Se single layer (with composition x = 0.59 and thickness of 400 nm), prepared by thermal vacuum evaporation, through alloying of ultrathin ZnSe and CdSe films with equivalent thickness, were measured in the temperature range from 20 to 600 °C using Linkam THMS 600 heating stage coupled with Jobin Yvon T64000 micro‐Raman system.…”

“…[38] There are also the strong indications that vibration properties of thin layers are not identical to those for bulk Zn 1-x Cd x Se mixed crystal. [39] The Raman spectra of microcrystalline Zn x Cd 1-x Se single layer (with composition x ¼ 0.59 and thickness of 400 nm), prepared by thermal vacuum evaporation, through alloying of ultrathin ZnSe and CdSe films with equivalent thickness, [40] were measured in the temperature range from 20 to 600 C using Linkam THMS 600 heating stage coupled with Jobin Yvon T64000 micro-Raman system. Some of these spectra, obtained with 514.5 nm line of mixed Ar/Kr laser, are presented in the Figure 4a.…”

Studies on growth and characterization of CdS1−xSex (0.0≤x≤1.0) alloy thin films by spray pyrolysis

“…With the exception of HgSe and HgTe (semimetals), they are direct band gap semiconductors with high optical transition probabilities for absorption and emission. They have higher bandgap energy than the corresponding III-V compounds due to the larger ionicity in II-VI compounds [1]. Because of their large optical absorption coefficients at above bandgap wavelengths, the II-VI semiconductor of about 1 m thickness is sufficient to absorb 99% of the impinging radiation with photon energy higher than the bandgap energy.…”