Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

Tsen, Kong-Thon; Liang, W.; Ferry, D. K.; Lu, Hai; Schaff, William J.; Özgür, Ü.; Fu, Y.; Youngjoo, Moon; Yun, Feng; Morkoç̌, H.; Everitt, Henry O.

doi:10.1016/j.spmi.2005.04.004

Cited by 19 publications

(6 citation statements)

References 79 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Instead, there are several optical methods to measure the drift velocity transients. These include the timeresolved electroabsorption technique [18] and the transient subpicosecond Raman spectroscopy [21]. A characterization of drift velocity-based nonlinearities in doped semiconductors can also be studied in THz-pump/THz-probe experiments described in [10,22].…”

Section: Transient Effectsmentioning

confidence: 99%

Electron transport in bulk GaN under ultrashort high-electric field transient

Korotyeyev

Kochelap

2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We have investigated nonlinear electron transport in GaN induced by high-electric field transients by analyzing the temporal dependence of the electron drift velocity and temperature. For picosecond transients, our calculations have established that the electron dynamics retain almost all the features of the steady-state velocity-field characteristics including the portion with negative differential conductivity. It was also found that transient currents in GaN samples give rise to the THz re-emission effect-radiation of electromagnetic field, temporal and spectral properties of which directly relate to the velocity-field characteristics of the sample. The results clearly indicate that existing methods for the generation of high-electric field transients and subpicosecond signal measurements can be applied to the characterization of hot electron transport at ultrahigh fields while avoiding Joule self-heating, hot phonon accumulation and other undesirable effects.

show abstract

Section: Transient Effectsmentioning

confidence: 99%

Electron transport in bulk GaN under ultrashort high-electric field transient

Korotyeyev

Kochelap

2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…This indicates that its ternary compound In x Ga 1−x N not only has great potential for white-light generation but also is suitable for applications in solar cells. InN also has been theoretically predicted [6][7][8] and experimentally demonstrated [9,10] to have enormously large transient electron drift velocity. As a result, InN is also very attractive for use in the fabrication of electronic devices of extremely high performance.…”

Section: Introductionmentioning

confidence: 98%

Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy

Tsen¹,

Kiang²,

Ferry³

et al. 2007

J. Phys.: Condens. Matter

Self Cite

View full text Add to dashboard Cite

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the A1(LO) and E1(LO) phonon modes in InN at T = 10 K for photoexcited electron–hole pair density ranging from 5 × 1017 to 2 × 1019 cm−3. The lifetime has been found to decrease from 2.2 ps at the lowest density to 0.25 ps at the highest density. Our experimental findings demonstrate that the carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.

show abstract

“…[44,45] The 2DEG electron mobility in AlGaN/GaN heterostructures is an important parameter often used to assess the epitaxial quality and to optimize the performance of high electron mobility transistors (HEMTs). Over the past few years, both experimental [46][47][48] and theoretical [39,47,[49][50][51][52][53][54][55][56] [57,58] others have reported the opposite trend. [59,60] Other reports have also shown that the thickness of the GaN-cap and the AlGaN barrier can cause the mobility of the 2DEG to increase or decrease depending to the specific epitaxial structure of the sensor.…”

Section: Introductionmentioning

confidence: 99%