2009
DOI: 10.1103/physrevlett.102.127402
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Optical Spin Orientation of a Single Manganese Atom in a Semiconductor Quantum Dot Using Quasiresonant Photoexcitation

Abstract: An optical spin orientation is achieved for a Mn atom localized in a semiconductor quantum dot using quasiresonant excitation at zero magnetic field. Optically created spin-polarized carriers generate an energy splitting of the Mn spin and enable magnetic moment orientation controlled by the photon helicity and energy. The dynamics and the magnetic field dependence of the optical pumping mechanism show that the spin lifetime of an isolated Mn atom at zero magnetic field is controlled by a magnetic anisotropy i… Show more

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Cited by 143 publications
(192 citation statements)
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“…τ i > τ s . As mentioned in the introduction, a single Mn spin relaxation time from 1 µs to 0.4 ms in CdTe QD 10,13 , and electron life time from 50 ns to 1 µs in II-VI semiconductor systems are reported. Even in a QD including certain charges, the Mn atom relaxes in a time scale of about 100 ns.…”
Section: Discussionmentioning
confidence: 99%
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“…τ i > τ s . As mentioned in the introduction, a single Mn spin relaxation time from 1 µs to 0.4 ms in CdTe QD 10,13 , and electron life time from 50 ns to 1 µs in II-VI semiconductor systems are reported. Even in a QD including certain charges, the Mn atom relaxes in a time scale of about 100 ns.…”
Section: Discussionmentioning
confidence: 99%
“…12 Third, Magnetic atom such as Mn impurity with relaxation time from 1 µs to 0.4 ms was observed in experiment. 10,13 The time is longer than driving time of the magnetic atom, which will be shown later in the present work. Forth, the technique for real time detection of single electron tunneling has been well developed recently.…”
Section: Introductionmentioning
confidence: 91%
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“…The Mn also exhibits a fine structure dominated by a magnetic anisotropy with an easy axis along the QD axis 9,17 . Neglecting the small tetrahedral crystal field 15,16 , this fine structure is described by the spin Hamiltonian…”
mentioning
confidence: 99%
“…D 0 varies from 0 µeV for a strain free QD 14 to 12 µeV for a fully strained CdTe layer matched on a ZnTe substrate 17 . These crystal field terms do not affect the PL spectra as they are present both in the excited (X + -Mn) and ground (h-Mn) states.…”
mentioning
confidence: 99%