Optical spin injection in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>monolayers

Arzate, N.; Mendoza, Bernardo S.; Vázquez-Nava, R. A.; Ibarra-Borja, Zeferino; Álvarez-Núñez, M. I.

doi:10.1103/physrevb.93.115433

Cited by 9 publications

(4 citation statements)

References 56 publications

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“…Figure 8bshows the optical band gap energy of MoS 2 films at different deposition temperatures.Figure 8dshows the optical band gap of the MoS 2 films prepared at 200 • C after annealing at different temperatures. Compared with the theoretical value (1.29 eV) in the literature[17], the band gap energy of films prepared at different deposition temperatures is reduced by 0.14-0.21 eV; the optical band gap energy of MoS 2 films prepared at 200 • C is reduced by 0.32-0.58 eV. The deposition temperature and annealing treatment have a great influence on the band gap of the film.…”

mentioning

confidence: 53%

“…The films are annealed or combined with other materials, such as silicon carbide crystals, thereby effectively improving their electrical properties [12][13][14][15]. The films have a direct band gap of 1.93 eV and an indirect band gap of 1.2 eV [16,17], and they are a promising photocatalyst [18]. Therefore, studying the structure and performance of MoS 2 films is or great practical significance.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Chen

Cui

et al. 2020

Materials

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In this study, molybdenum disulfide (MoS2) film samples were prepared at different temperatures and annealed through magnetron sputtering technology. The surface morphology, crystal structure, bonding structure, and optical properties of the samples were characterized and analyzed. The surface of the MoS2 films prepared by radio frequency magnetron sputtering is tightly coupled and well crystallized, the density of the films decreases, and their voids and grain size increase with the increase in deposition temperature. The higher the deposition temperature is, the more stable the MoS2 films deposited will be, and the 200 °C deposition temperature is an inflection point of the film stability. Annealing temperature affects the structure of the films, which is mainly related to sulfur and the growth mechanism of the films. Further research shows that the optical band gaps of the films deposited at different temperatures range from 0.92 eV to 1.15 eV, showing semiconductor bandgap characteristics. The optical band gap of the films deposited at 200 °C is slightly reduced after annealing in the range of 0.71–0.91 eV. After annealing, the optical band gap of the films decreases because of the two exciton peaks generated by the K point in the Brillouin zone of MoS2. The blue shift of the K point in the Brillouin zone causes a certain change in the optical band gap of the films.

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mentioning

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Chen

Cui

et al. 2020

Materials

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“…The only non-zero component is η yyx 2 and, as a consequence, injection current can only flow perpendicularly to the polar (x) axis. The injection current tensor η 2 reaches peak values of 10 11 A/V 2 s in the visible spectrum (1.5 − 3 eV) (Panday et al, 2019), which is many orders of magnitude larger than its peak value in MoS 2 MLs (Arzate et al, 2016). The second term in Eqn.…”

Section: Second Harmonic Generationmentioning

confidence: 92%

Colloquium: Physical properties of group-IV monochalcogenide monolayers

Barraza-Lopez,

Fregoso,

Villanova

et al. 2020

Preprint

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A. Polarization switching and ultrathin memories based on in-plane ferroelectric tunnel junctions V. Linear elastic properties, auxetic behavior, and piezoelectricity of O−M X MLs VI. Structural degeneracies and anharmonic elastic energy of O−M X MLs VII. Structural phase transition and pyroelectric behavior of O−M X MLs VIII. Electronic, valley and spin properties of O−M X MLs A. Electronic band structure B. Valleytronics C. Persistent spin helix behavior IX. Optical properties of O−M X MLs

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“…Optical excitation of valley polarized exciton [3] have been realized in experiment [4][5][6][7][8][9] and proposed as valleytronic devices [10,11]. On the other hand, optical injection of spin current in monolayer TMDs have been studied and proposed as spintronic devices [12,13]. Because the band gaps of the TMDs vary between 1 eV and 1.5 eV [14,15], the optical frequency is limited within the range of near-infrared and visible light.…”

Section: Introductionmentioning

confidence: 99%

Optical injection of spin current into a zigzag nanoribbon of monolayer MoS2 with antiferromagnetic Kekule distortion

Luo¹

2019

Phys. Rev. B

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Kekule pattern of (anti)ferromagnetic exchange field on the monolayer M oS2 could be induced by proximity to the (111) surface of BiF eO3 on both sides. The magnetization orientations of the substrates control the pattern of exchange field, which in turn switch the band structures of the lowest zigzag edge states between being metallic and insulating. The lowest four zigzag edge bands provides conducting channels with spin-polarized current. Optical excitation of carriers in these bands generate sizable spin and charge currents, which is theoretically modelled by the perturbation solution of the semiconductor Bloch equation.

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Optical spin injection inMoS2monolayers

Cited by 9 publications

References 56 publications

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Colloquium: Physical properties of group-IV monochalcogenide monolayers

Optical injection of spin current into a zigzag nanoribbon of monolayer MoS2 with antiferromagnetic Kekule distortion

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