Optical signatures of asymmetric fractal diffusion of electron-hole plasma in semiconductor quantum wells

Abstract

The lateral electron-hole transport in intrinsic In0.53Ga0.47As∕InP quantum well, grown on tilted InP substrate, was investigated by scanning the photoluminescence intensity profile on the sample’s surface. Simulations of the asymmetric carrier density profile, using a non-Fickian diffusion equation described by the Lévy statistics [S. I. Denisov et al., Phys. Rev. E 73, 036120 (2006)], show that anomalous diffusion observed along the y direction (perpendicular to the terrace edges) is associated with the presence of Auger recombination, more likely induced by the fractal interface morphology.

Anomalous Diffusion: A Basic Mechanism for the Evolution of Inhomogeneous Systems

“…The recent interest in the study of complex systems has led to an increased focus on anomalous diffusion [4-7, 36, 42, 45], which has been described in biological systems [42][43][44], protostellar birth [47], complex fluids [48][49][50][51][52][53], electronic transportation [54][55][56][57][58][59], porous media and infiltration [60][61][62], drug delivery [63][64][65][66], fractal structures and networks [67][68][69][70][71], and in water's anomalous behavior [72][73][74], phase transitions in synchronizing oscillators [39,40,[75][76][77], to name a few.…”