Optical second‐harmonic generation study of charge trapping dynamics in HfO₂/SiO₂ films on Si(100)

Abstract

Electrostatic‐Field‐Induced Second Harmonic (EFISH) generation is used to characterize laser‐induced charge trapping dynamics in thin HfO2 films deposited on chemically oxidized P‐type Si(100) substrates. We monitor EFISH generation as a function of time, HfO2 thickness and post‐deposition annealing (PDA). In as‐deposited films, the results show that electrons and holes are injected and trapped in comparable amounts, but on different time scales. In annealed films, electron dynamics dominate at all times. Quantitative details depend on film thickness. These results show that time‐dependent EFISH generation can provide an in situ, non‐destructive diagnostic of charge trapping in thin high‐k gate dielectric films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion

“…Electronic spin resonance (ESR) measurements, on the other hand, suggest that metal-induced O-vacancies in SiO 2 interfacial layer increased because metal/high-j process significantly enhances E 0 center density in SiO 2 IL [20]. Optical studies to understand high-j induced defects in IL also show that as far as defect density is concerned, 2 nm ISSG IL is superior to 1.1 nm ISSG IL which is better than 1.1 nm chemical oxides IL [21]. Electron traps correlate well with O-vacancies in SiO 2 interfacial oxide as observed from electrical characterization [16].…”