2020
DOI: 10.23851/mjs.v31i3.864
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Optical Response of GaAs0.75Sb0.25 Nanosheet for Dependent Pressure

Abstract: The study analyzed the optical response of GaAs0.75Sb0.25 nanosheet under high pressure. It is the generalized gradient approximation (GGA) within the framework of density functional theory (DFT) was employed by means of a simulation program, which is called CASTEP. Under different pressure (P = 0, 2, and 4 GPa). Geometry optimized parameters were calculated for the nanosheet. The optical data alter in accordance with high pressure. The increase of pressure in the nanosheet led to a rise in p = 4 GPa and a dec… Show more

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Cited by 7 publications
(5 citation statements)
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“…In this section, optimal optical band gaps values in the range of 0-2.5 eV have been optimized using scissor operations with 0.91 eV. 18,28 Scissor action connects z E-mail: mazin.othman@soran.edu.iq ECS Journal of Solid State Science and Technology, 2022 11 013012 theoretical and experimental values. The precise optical band gap energy can be acquired in this manner.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In this section, optimal optical band gaps values in the range of 0-2.5 eV have been optimized using scissor operations with 0.91 eV. 18,28 Scissor action connects z E-mail: mazin.othman@soran.edu.iq ECS Journal of Solid State Science and Technology, 2022 11 013012 theoretical and experimental values. The precise optical band gap energy can be acquired in this manner.…”
Section: Resultsmentioning
confidence: 99%
“…Simulation work 18 produced a geometry-optimized structure of a rocksalt Cd 32 O 32 cluster. Optimized structural parameters were employed in all calculations.…”
Section: Theoretical Techniquementioning
confidence: 99%
“…Numerous methods have been utilized to study the band-structure of semiconductors; among them is the so-called EPM (Chelikowsky and Cohen 1976;Degheidy et al , 2021Elkenany 2021aElkenany , 2021bElkenany , 2021cPandey and Phillips 1974). The temperature and pressure dependence of the physical properties for the alloys have been recorded theoretically and experimentally by several works (Chen and Ravindra 2012;Degheidy et al 2013Degheidy and Elkenany 2015a, 2015b, 2016Elkenany 2015;Al Maaitah and Elkenany 2022;Othman 2020bOthman , 2020aSaib et al 2008;Sherzad Othman et al 2021;Wang et al 2012;Yang et al 2021). This area of research is still active and growing.…”
Section: Introductionmentioning
confidence: 99%
“…Gagui et al [18] studied the phase transition, some properties of GaAs 1βˆ’x Sb x . The factor of temperature and pressure dependency of optoelectronic semiconductors have been investigated in several studies [19][20][21][22][23][24][25][26][27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%